| Allicdata Part #: | 1086-20760-ND |
| Manufacturer Part#: |
JANTX2N2906AUA |
| Price: | $ 22.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS PNP 60V 0.6A |
| More Detail: | Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surf... |
| DataSheet: | JANTX2N2906AUA Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 20.49030 |
| Series: | Military, MIL-PRF-19500/291 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 600mA |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 4-SMD, No Lead |
| Supplier Device Package: | 4-SMD |
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The JANTX2N2906AUA is a silicon NPN transistor designed for high frequency and high speed switching applications. It is commonly used in power amplifiers, audio amplifiers, and RF circuits. The JANTX2N2906AUA has an excellent frequency response and is suitable for operations up to 200MHz. As an NPN type bipolar junction transistor (BJT), it consists of three regions: emitter, collector, and base.
The emitter of the JANTX2N2906AUA is a P-type semiconductor region which accept electrons into it. The collector is an N-type semiconductor region which provides a path for the electrons to travel from the emitter to the external circuit. The base is a narrow and lightly doped region between the emitter and the collector. When a voltage is applied to the base, it controls the current flowing from the emitter to the collector allowing for current amplification. The greater the base voltage, the greater the current flow between the emitter and collector and the higher the current gain factor, β.
The operating frequency of JANTX2N2906AUA is up to 200MHz and its switching speed is as fast as 200ns. This is possible due to its excellent frequency response and a reduced gain-bandwidth of 6MHz when compared to other types of transistors. It has a maximum collector-emitter voltage of 50V and a maximum collector current of 200mA. It also has a high emitter-collector voltage of 60V and a low saturation voltage of 0.15V. JANTX2N2906AUA also has a good thermal dissipation rating of 6.25W.
Due to its high frequency and speed switching capabilities, JANTX2N2906AUA is an ideal choice for a wide range of applications including power amplifiers, audio amplifiers, and RF circuits. It is also well-suited for high speed switching operations, such as servos and motor control. Additionally, its low saturation voltage and high current gain make it suitable for use in motor starters, voltage regulators, and other current limiting applications.
The JANTX2N2906AUA is an excellent choice for applications requiring high frequency and speed switching. Its excellent frequency response, low saturation voltage, and high current gain make it ideal for a wide range of applications. Its high emitter-collector voltage and high thermal dissipation rating ensure that it can handle the high-power switching operations necessary for most applications. The JANTX2N2906AUA is a versatile and reliable choice for high frequency and speed switching operations.
The specific data is subject to PDF, and the above content is for reference
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JANTX2N2906AUA Datasheet/PDF