JANTX2N2907AUA Allicdata Electronics
Allicdata Part #:

1086-2689-ND

Manufacturer Part#:

JANTX2N2907AUA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 0.6A
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surf...
DataSheet: JANTX2N2907AUA datasheetJANTX2N2907AUA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Military, MIL-PRF-19500/291
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA
Description

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Introduction

The JANTX2N2907AUA is a high-performance transistor manufactured by AGILENT technologies. It is part of the discrete transistors doping mode product family and is categorized as a NPN Bipolar Transistor (BJT). The JANTX2N2907AUA is a single-transistor device capable of handling large currents while maintaining superior high-frequency performance. The low-frequency properties of the transistor make it useful in a wide variety of configurations, from consumer audio amplifiers to automotive radio receivers.

Features

The JANTX2N2907AUA has a wide range of features that make it a great choice for many applications. First, its low saturation voltage, VCE(sat), ensures proper transistor characteristics operate in both small and large signal regimes. Second, it has a very low hFE, or gain. This is significant because it ensures that the device does not act as a current amplifier, which would reduce the accuracy of the circuit. Third, the collector-emitter voltage is also very low, VCE(sat), allowing the device to be used in a much wider range of applications than other transistors. Finally, the device also has a high maximum collector current rating of 800mA.

Applications

The JANTX2N2907AUA is suitable for a wide variety of applications, from consumer audio amplifiers to automotive radio receivers. The device is able to handle large currents while maintaining excellent high frequency performance and very low saturation voltages. The transistor can be used in a number of RF and IF amplifiers, as well as in switching and logic circuits.

Working Principle

The working principle of the JANTX2N2907AUA is based on the two-region operation of a bipolar transistor. The two regions are the collector-base junction and the emitter-base junction. When a small current is passed through the emitter of the transistor, a large current is produced in the collector. This is a consequence of the base-collector junction having a much higher resistance than the emitter-base junction, as well as the transistor\'s ability to amplify the current in the collector. The amount of amplification can be controlled by adjusting the current in the base of the transistor.

Conclusion

The JANTX2N2907AUA is a high-performance transistor manufactured by AGILENT technologies. It is part of the discrete transistors doping mode product family and is categorized as a NPN Bipolar Transistor (BJT). The device is able to handle large currents while maintaining excellent high frequency performance and very low saturation voltages. The JANTX2N2907AUA is suitable for a wide variety of applications, from consumer audio amplifiers to automotive radio receivers. Its working principle is based on the two-region operation of a bipolar transistor, where the current in the base of the transistor controls the amount of amplification.

The specific data is subject to PDF, and the above content is for reference

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