| Allicdata Part #: | 1086-2695-ND |
| Manufacturer Part#: |
JANTX2N3439 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 350V 1A |
| More Detail: | Bipolar (BJT) Transistor NPN 350V 1A 800mW Throug... |
| DataSheet: | JANTX2N3439 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | Military, MIL-PRF-19500/368 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 350V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max): | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
| Power - Max: | 800mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 |
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JANTX2N3439 is an epitaxial planar bipolar transistor made especially for military, industrial and commercial applications. This device is commonly used in circuits requiring high current handling capabilities, such as audio power amplifiers, motor control circuits, motor drivers, and high-power switches. It has a high switching speed, low noise, and is highly reliable.
JANTX2N3439 belongs to the Transistors - Bipolar (BJT) - Single category. This type of transistors has three terminals and can handle a higher range of current than Junction Field-Effect Transistors (JFETs). This transistor operates in a few different modes, including common-emitter, common-collector and common-base. It is mainly used for switching and amplifying signals in a wide range of applications, such as radio frequency amplifiers, switching and power supplies.
JANTX2N3439 is well suited for high-power switching and amplifying operations. It is fabricated from a single, solid piece of semiconductor material. This device mainly uses a bipolar transistor to amplify an input signal, resulting in an output current. The internal structure of the transistor consists of two layers of semiconductor material, with the innermost layer known as the collector and the outermost layer known as the emitter.
The JANTX2N3439 transistor works mainly in the common-emitter mode. In this mode, a positive voltage applied to the base (B) of the transistor is amplified and produces a current at the collector (C) which is basicially proportional to the current at the base (B). The greater the voltage applied to the base (B), the higher the current at the collector (C). The base-emitter junction of the transistor is often forward-biased, while the collector-base junction is reverse-biased.
The operation of the JANTX2N3439 transistor is determined by its implementation in a circuit. This device can be used as an amplifier or a switch in various configurations. When used as an amplifier, the emitter-base junction rapidly becomes saturated, resulting in a gain in current at the collector (C). Similarly, when used as a switch, the junction between collector and emitter remains open while the base-emitter junction is forward-biased. This allows current to flow from the collector to the emitter, closing the switch.
In conclusion, the JANTX2N3439 is an epitaxial planar bipolar transistor suitable for high-power switching and amplifying operations. This device belongs to the Transistors - Bipolar (BJT) - Single category and is mainly used for switching and amplifying signals in a wide range of applications. It works mainly in the common-emitter mode and is capable of producing a gain in current at the collector (C).
The specific data is subject to PDF, and the above content is for reference
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JANTX2N3439 Datasheet/PDF