Allicdata Part #: | 1086-20877-ND |
Manufacturer Part#: |
JANTX2N3635UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 140V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 140V 1A 1.5W Surface... |
DataSheet: | JANTX2N3635UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/357 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-SMD |
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The JANTX2N3635UB is a complete monolithic NPN bipolar junction transistor (BJT) that belongs to the family of single transistors. It is made from silicon and features a wide range of application fields and a working principle. This device was originally developed for use in linear and switching applications.
This product has had significant applications in amplifier and switch circuits such as audio amplifiers, high power amplifiers and power switching applications. It is also used for negative biasing and for high voltage current sources in switch-mode power supplies.
The JANTX2N3635UB features an integrated NPN epitaxial silicon transistor. This device has an active base, an emitter and a collector. The typical operating conditions are a collector-base voltage of -10V to -60V and a collector-emitter voltage of -15V to -100V. The maximum collector current is 0.6A and the maximum power dissipation is 1000mW.
The transistors’ working principle is based on a negative voltage applied between the base and the emitter. This creates an N-channel which controls the current flow between the collector and the emitter. The current between the emitter and collector is proportional to the voltage applied between the base and emitter, called the “Early voltage”. This is why it is imperative for the current flow to be limited between the base-emitter junction in order to ensure that the voltage does not exceed the maximum ratings.
The JANTX2N3635UB also features a low power threshold, as well as a high switching speed. It is also capable of operating at up to 45W temperatures with a 0.45 gain eMOSFET. The JANTX2N3635UB also features a high level of reliability and is a very versatile device, with multiple applications.
The JANTX2N3635UB can be used in a wide range of applications including amplifying and switching applications. It can be used as a negative biasing and high voltage current source transistor in switch-mode power supplies, and is ideal for audio amplifiers and high power amplifiers. Furthermore, this device also provides excellent switching characteristics, making it suitable for a wide range of applications.
In summary, the JANTX2N3635UB belongs to the family of single transistors and has applications in the field of amplifier and switch circuits. It is based on the working principle of a negative voltage applied between the base and the emitter, and is capable of operating at up to 45W temperatures. It also features a low power threshold, as well as a high switching speed and a high level of reliability.
The specific data is subject to PDF, and the above content is for reference
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