| Allicdata Part #: | 1086-2707-ND |
| Manufacturer Part#: |
JANTX2N3737 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 40V 1.5A |
| More Detail: | Bipolar (BJT) Transistor NPN 40V 1.5A 500mW Throu... |
| DataSheet: | JANTX2N3737 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | Military, MIL-PRF-19500/395 |
| Packaging: | Bulk |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 1.5V |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-46-3 |
| Supplier Device Package: | TO-46 (TO-206AB) |
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The JANTX2N3737 is a single, NPN bipolar junction transistor (BJT), designed to work in a variety of applications. Its advanced fabrication techniques and small signal design techniques make it ideal for use in such applications as high fidelity, signal leveling, video signal processing, power amplification, and low frequency feedback. As a result, it has become a popular choice for many types of single bipolar junction transistor applications.
The JANTX2N3737 is made up of two p-type semiconductor layers and one n-type semiconductor layer. A base layer of p-type semiconductor is sandwiched between two n-type layers. A collector layer of n-type semiconductor is held between the base layer and the emitter layer. In order for the JANTX2N3737 to function, electrical current must flow from the collector to the emitter. This current flow causes electrons to be released from the emitter and to be collected by the collector.
The JANTX2N3737 has a current gain of up to 60, which allows it to produce excellent high frequency response. The JANTX2N3737 is also well-suited to power amplification, due to its superior linearity. The JANTX2N3737 has a minimum voltage drop at the collector, making it well-suited to applications involving low voltage amplification.
The JANTX2N3737 is also a great choice for low frequency feedback. It has a high current gain and a low-frequency feedback coefficient. This makes it suited for applications involving high precision gain control and low-level feedback.
The JANTX2N3737 is an ideal choice for many applications, due to its superior performance characteristics. Its small size and fast switching speed make it ideal for a variety of single bipolar junction transistor applications. Its superior linearity makes it well-suited for high power applications. It has a high current gain and a low voltage drop, making it a great choice for low voltage amplification. Its low-frequency feedback characteristics make it perfect for applications involving precision gain control and low-level feedback.
The JANTX2N3737 is a versatile single, NPN bipolar junction transistor that is well-suited for a variety of applications. Its advanced fabrication techniques and small signal design techniques make it an ideal choice for many types of applications. Its superior linearity, high current gain, and low voltage drop make it an excellent choice for both power amplification and low voltage amplification applications. Its high current gain and low-frequency feedback coefficient make it perfect for low level feedback applications. The JANTX2N3737 is an excellent choice for a variety of single bipolar junction transistor applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX2N3737 Datasheet/PDF