JANTX2N3743 Allicdata Electronics
Allicdata Part #:

1086-15513-ND

Manufacturer Part#:

JANTX2N3743

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 300V 0.2A TO-39
More Detail: Bipolar (BJT) Transistor PNP 300V 200mA 1W Throug...
DataSheet: JANTX2N3743 datasheetJANTX2N3743 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/397
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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The JANTX2N3743 is a type of bipolar junction transistor (BJT) known as a single transistor. This type of device is based on a junction between a single pnp semiconductor material, as opposed to dual pnp transistors. It is typically used in a variety of functions in analog and digital signal processing applications, including in high frequency, low noise, and low signal applications.

The working principle of the JANTX2N3743 is based on the fact that when a voltage is applied to the base of a single pnp transistor, electrons in the pnp semiconductor material are forced to flow resulting in a current being output from the collector, thus amplifying an input signal. The bipolar junction transistor consists of three layers of semiconductor material, each with its own set of characteristics. The first layer creates the base, the second layer, the emitter, and third layer the collector. The emitter

The specific data is subject to PDF, and the above content is for reference

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