Allicdata Part #: | 1088-1016-ND |
Manufacturer Part#: |
JANTX2N4093UB |
Price: | $ 99.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | JFET N-CH 40V 0.36W SMD |
More Detail: | JFET N-Channel 40V 360mW Surface Mount UB |
DataSheet: | JANTX2N4093UB Datasheet/PDF |
Quantity: | 118 |
1 +: | $ 90.57510 |
10 +: | $ 84.65450 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 8mA @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 16pF @ 20V |
Resistance - RDS(On): | 80 Ohms |
Power - Max: | 360mW |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
Base Part Number: | 2N4093 |
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JANTX2N4093UB is a type of N-channel JFET transistor, which refers to JFET transistor with N-channel. A JFET is short for Junction Field Effect Transistor, which utilizes the phenomenan of electric field in junction area. In brief, it is a voltage-controlled three-terminal unipolar transistor. This type of transistor is mainly used in audio preamplifier circuits, mixer circuits, and low noise amplifier circuit, and is especially popular in smaller circuits.
The structure of JFET are similar to those of an ordinary PN junction diode. A reverse-biased PN junction exists in the middle between two regions and a conducting interface is created at the two sides. A voltage is applied between the two regions where electrons are attracted from the source side and drawn into the drain side. Thus, a current is formed and flows between the two regions. This current is often referred to as “JFET current”.
JFETs have a number of advantages over P-channel devices due to their higher transconductance and better noise performance. In addition, JFETs provide higher gain and large output resistance, which make them suitable for large- and small-signal applications. This is why JFETs are typically used in both low- and high-frequency circuits.
The JANTX2N4093UB is a surface-mount discrete component with a maximum drain-source breakdown voltage of 75 V, gate-source breakdown voltage of 120 V, and maximum power dissipation of 250 mW. It offers low noise figure, fast switching speed, and a wide gain range over a wide temperature range. It is suitable for applications such as audio preamplifier circuits, mixer circuits, and low noise amplifiers.
The working principle of the JANTX2N4093UB is simple. When there is no voltage in the gate terminal, drain current can independent of the drain-source voltage. This means that the JFET is in its cutoff region and no current is flowing. When the gate voltage is increased, the drain current increases and this region is called the active region. When the gate voltage is increased further, the drain current will reach its maximum value and this region is called the saturation region. Furthermore, the JFET has a good temperature stability when operated at its drain-source voltage.
To sum up, JANTX2N4093UB is a type of N-channel JFET transistor with high gain and large output resistance. It offers a wide range of features such as low noise figure and fast switching speed, making it suitable for various applications such as audio preamplifiers, mixer circuits, and low noise amplifiers. In addition, its working principle is based on simple electrode arrangements and the control of drain current by gate voltage.
The specific data is subject to PDF, and the above content is for reference
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