JANTX2N5039 Allicdata Electronics
Allicdata Part #:

1086-16141-ND

Manufacturer Part#:

JANTX2N5039

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 75V 20A TO-3
More Detail: Bipolar (BJT) Transistor NPN 75V 20A 140W Through...
DataSheet: JANTX2N5039 datasheetJANTX2N5039 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/439
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 75V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 5V
Power - Max: 140W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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The JANTX2N5039 is a high voltage, high speed, NPN silicon transistor designed for high-power switching and general-purpose amplifier applications. The JANTX2N5039 has been designed with a high breakdown voltage rating of 600 volts, making it suitable for a wide range of applications.

The JANTX2N5039 is a bipolar junction transistor (BJT) that is classified as a single device. BJTs are used in many applications due to their low cost, higher breakdown voltage rating and voltage gain. They are also used in amplifiers and switching applications due to their high current gain and low noise levels. The JANTX2N5039 is well suited for these applications due to its high-voltage capacity and high-power ratings.

The JANTX2N5039 operates by utilizing the base-emitter junction in the device. When voltage is applied to the base of the device, the electrons from the base travel across the device junction and the current flowing through the base-emitter junction induces a current flow from the emitter to the collector. This current flow, known as collector current, can be increased by increasing the base current, thus enabling the device to amplify or switch the base current. The device\'s current gain is also known as hFE.

The JANTX2N5039 can be used in many applications, such as high-power switching, power amplification, and low-power amplifier applications. The device offers excellent high-voltage stability, fast switching speed, and is able to achieve a current gain of up to 1000. The device is also well suited for switch mode power supplies, motor controls, and linear power amplifiers.

In summary, the JANTX2N5039 is a high voltage, high-speed bipolar junction transistor (BJT) with a high breakdown voltage rating. The device is well suited for high-power switching and general-purpose amplifier applications due to its high current gain, fast switching speed, and high voltage stability. The JANTX2N5039 is also an excellent choice for applications such as switch mode power supplies, motor controls and linear power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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