JANTX2N5237S Allicdata Electronics
Allicdata Part #:

1086-21036-ND

Manufacturer Part#:

JANTX2N5237S

Price: $ 19.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 120V 10A TO39
More Detail: Bipolar (BJT) Transistor NPN 120V 10A 1W Through ...
DataSheet: JANTX2N5237S datasheetJANTX2N5237S Datasheet/PDF
Quantity: 1000
100 +: $ 18.00630
Stock 1000Can Ship Immediately
$ 19.81
Specifications
Series: Military, MIL-PRF-19500/394
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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The JANTX2N5237S is a SC-70 packaged, 10V, NPN-silicon planar bipolar transistor widely used in telecommunications and RF applications. This type of transistor is categorized as a single bipolar junction transistor, abbreviated as BJT. This S-type low-noise transistor is manufactured using the highest industry standards to ensure reliable and consistent performance.

The JANTX2N5237S features high gain-bandwidth performance, low input capacitance, low reverse current (Irev) and fast switching speeds. These characteristics make the device ideal for applications such as RF amplifiers and oscillators, high speed amplifiers, mixed signal amplifiers and moderate-speed switch circuits. With the high gain-bandwidth performance, the device can provide a variety of different amplifiers and circuits with highly accurate responses at a wide range of frequencies.

The JANTX2N5237S working principle is based on bipolar junction theory. Similar to all other transistors, a BJT consists of a base-emitter junction and a collector-base junction. The current that flows between these two junctions is known as collector current (Ic). When a voltage is applied to the base of the transistor, a current flows from the collector to the emitter. This, in turn, controls the current flow through the external circuit, which is connected to the collector, base and emitter of the transistor.

When a positive voltage is applied to the base, it injects electrons into the collector-base junction, creating a large current path between the two terminal junctions. This current path is known as the saturation region. As the voltage increases, the current through the collector-base junction increases, resulting in higher current gain. When the voltage is removed, the current flow between the collector-base junction reduces, resulting in the transistor reverting back to its non-saturated state.

The JANTX2N5237S is capable of high-speed switching, due to the low input capacitance, fast transition and low reverse current features. This makes it suitable for various applications where high switching speeds are required. It is also capable of providing excellent linearity across a wide range of frequencies, making it ideal for RF amplifiers, oscillators and mix-signal amplifiers.

The JANTX2N5237S offers excellent power characteristics, with low reverse current (Irev) and low noise. This enables the device to be used in power amplifiers and power supply circuits, where low noise and high power efficiency are important. The device also offers excellent thermal stability and long-term reliability.

In conclusion, the JANTX2N5237S is a single bipolar junction transistor designed for telecommunications and RF applications. It offers low input capacitance, low reverse current (Irev) and fast switching speeds, as well as excellent linearity across a wide range of frequencies. With its power characteristics, reliability and thermal stability, the JANTX2N5237S is an ideal choice for a variety of circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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