JANTX2N5582 Allicdata Electronics
Allicdata Part #:

1086-2717-ND

Manufacturer Part#:

JANTX2N5582

Price: $ 11.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 50V 0.8A
More Detail: Bipolar (BJT) Transistor NPN 50V 800mA 500mW Thro...
DataSheet: JANTX2N5582 datasheetJANTX2N5582 Datasheet/PDF
Quantity: 1000
100 +: $ 10.09950
Stock 1000Can Ship Immediately
$ 11.11
Specifications
Series: Military, MIL-PRF-19500/423
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46-3
Description

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The JANTX2N5582 is a discrete component, classified as a single bipolar junction transistor (BJT). It is a semiconductor device which utilizes a three layer, p-n-p or n-p-n arrangement for the flow of electric current. BJTs are used as amplifiers, switches, and in oscillators. The JANTX2N5582 has a wide range of potential applications, from basic switched circuits to more advanced amplifiers and oscillators. Its operating principle is based on the base-collector-emitter voltage relationships that occur when electricity is passed through it.

The bipolar junction transistor consists of three leads, called the base, collector, and emitter. When a voltage is applied to the base lead, voltage and current configurations form at the collector and emitter. These configurations arise as a result of the junction between the p and n regions and the interactions that occur between the charges at these junctions. Depending on the applied voltage polarity, current will either flow from the collector to the emitter, or from the emitter to the collector. This current is referred to as the collector-emitter current (Ic), and this current is the basis for BJT operation. A small current in the base lead will cause a larger current to flow between the collector and emitter.

The JANTX2N5582 is most commonly used as an amplifier, switch and oscillator. The fundamental operation of this transistor in these applications is based upon the transistor action, which is controlled by Ic. The configuration of the transistor creates a gain in the voltage, current and power of a signal, which is referred to as the ‘transistor action’. Depending on the applied biasing voltage, the current either flows from the collector to the emitter, or from the emitter to the collector. The voltage across the base-collector junction changes drastically when the current flowing through changes. Hence, an applied signal of a certain frequency at the input causes the transistor to switch between the two states. This property makes it ideal for use as a switch and oscillator.

The JANTX2N5582 is also used as an amplifier. BJTs work as amplifiers by varying the current gain through changing the current through the base lead. This changes the voltage across the emitter-collector junction, which increases the input signal. The gain of the device depends on the type of BJT used, the biasing circuits and the frequency of the signal.

In conclusion, the JANTX2N5582 is a single bipolar junction transistor used in a wide range of applications, from basic switched circuits to amplifiers and oscillators. Its operating principle is based on the base-collector-emitter voltage relationships arrangements when electricity is passed through it. This device is most commonly used as an amplifier, switch and oscillator, and its gain is dependent on the type of BJT used, the biasing circuits, and the frequency of the signal.

The specific data is subject to PDF, and the above content is for reference

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