Allicdata Part #: | 1086-16157-ND |
Manufacturer Part#: |
JANTX2N5662 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 200V 2A TO-5 |
More Detail: | Bipolar (BJT) Transistor NPN 200V 2A 1W Through H... |
DataSheet: | JANTX2N5662 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/454 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 400mA, 2A |
Current - Collector Cutoff (Max): | 200nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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When it comes to electronic equipment, transistors are essential components for any device. Transistors are also a type of semiconductor device that amplifies and switches electric current and/or voltage. The JANTX2N5662 is an NPN epitaxial silicon power transistor that is built in a standard TO-126 package.
The JANTX2N5662 is classified as a single Bipolar Junction Transistor, or BJT, because it consists of three terminals, an emitter, base, and collector. It is a power transistor that is mainly used in large power supplies and high-side gate drivers. It is capable of delivering up to 4 A of current, making it strong and reliable enough for high power applications.
For any transistor, the application and working principle is the same. The JANTX2N5662’s working principle is based on the ability of a BJT to control the current and voltage passing through the circuit by using the current flowing through the base-emitter junction. This change of current and voltage is called an “amplification” and is the power of the transistor. The amplification is usually much higher than that of a resistor-based circuit.
When the base voltage is 0.7V higher than the emitter voltage, the transistor develops a low resistance path between the emitter and the collector. This allows current to flow from the base to the emitter and from the emitter to the collector. The more current flowing through the base-emitter, the higher the current that flows from the emitter to the collector. As the current flowing from the emitter to the collector increases, the gain of the transistor increases.
The JANTX2N5662 is mainly used in applications such as voltage regulator and line loss compensators, cellular base station power amplifiers, medical equipment, audio power amplifiers, high-power supplies, high-frequency switching circuits, TV receivers, and military applications. Due to its high current capabilities, it is also well-suited for gatedriver applications. It is also suitable for motor control, general-purpose circuits, and fast switching applications.
The JANTX2N5662 has several properties that make it attractive for use in a variety of applications. It has a lower saturation voltage than other transistors, a low on-state drain voltage, low gate charge, and fast switching time. Additionally, it can tolerate high power levels and frequencies. As a result, it is widely used in high-power applications requiring reliability, high current capability, and fast switching speed.
The JANTX2N5662 is a semiconductor device that includes a three-terminal junction: emitter, base, and collector. Its unique properties provide high levels of power amplification, voltage control, and fast switching speed, making it an ideal choice for many applications. Its low on-state resistances allow high current levels, making it a powerful and reliable component. Its many advantages make it suitable for use in a variety of industries, including medical, military, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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