JANTX2N5745 Allicdata Electronics
Allicdata Part #:

1086-16173-ND

Manufacturer Part#:

JANTX2N5745

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 80V 20A TO-3
More Detail: Bipolar (BJT) Transistor PNP 80V 20A 5W Through H...
DataSheet: JANTX2N5745 datasheetJANTX2N5745 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/433
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 2V
Power - Max: 5W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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The JANTX 2N5745 is a dual-gate, field effect bipolar junction transistor that is widely used as a high-power amplifier in both commercial and industrial applications. This is because of its excellent performance characteristics. Its high output voltage and high current loading capability make it suitable for high power applications.

This transistor has a small signal gain of 500, low power consumption and a small package. It is also very reliable and has very good switching performance. It is highly suitable for use in automotive, aerospace, industrial, and telecommunications electronics.

The operating principle of JANTX 2N5745 is based on the principles of field effect bipolar junction transistors (FETs). FETs are three terminal devices that are used in various applications that require amplification. A source electrode is used to inject carriers into an active region of a transistor, and a gate electrode, connected to the source, is used to control the magnitude of the current passing through the active region. This current is then separated and output between two collector electrodes.

The active region of the JANTX 2N5745 is made up of a single layer of N-type doped silicon, which acts as the primary base. A positive voltage applied to the gate terminal can create a positive potential barrier at the adjacent electrode which attracts negative electrons from the adjacent electrode. These negative electrons travel across the active region to the N+ region and form holes, thus reducing the base current.

The JANTX 2N5745 is a very reliable device that is easily adaptable to a wide range of designs, applications and environments. Its characteristics provide low noise levels and low distortion in operation. Its high current capability is ideally suited for high power applications in automotive and industrial applications.

Applications for the JANTX 2N5745 include general purpose switching devices for high power and low voltage applications. It is also used as a power amplifier in radio receivers, and digital signal processing systems. It is also commonly used in high voltage amplifiers, power switching and voltage regulator circuits.

In conclusion, the JANTX 2N5745 is a versatile and reliable device that is well suited for various applications. Its high current and voltage capability, combined with its low noise and low distortion levels make it an ideal choice for applications that require high power, low distortion and reliability. It is a versatile device that can be easily adapted to a wide range of designs, applications and environments.

The specific data is subject to PDF, and the above content is for reference

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