JANTX2N6350 Allicdata Electronics
Allicdata Part #:

1086-16198-ND

Manufacturer Part#:

JANTX2N6350

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN DARL 80V 5A TO33
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 5A ...
DataSheet: JANTX2N6350 datasheetJANTX2N6350 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/472
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 5A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AC, TO-33-4 Metal Can
Supplier Device Package: TO-33
Description

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The JANTX2N6350 is a high-performance PNP transistor that has been designed to be used in applications that require high speed switching, low noise and low distortion. It is suitable for use in applications such as radio receivers, amplifier stages and audio preamplifiers.

The JANTX2N6350 is a single, bipolar junction transistor (BJT) and is composed of a single PNP bipolar junction transistor, as well as associated passive elements such as resistors, capacitors, and inductors. The transistor is designed to be used in circuit designs that require a low voltage, low power device that can be operated at high frequencies, with minimal noise and distortion.

The JANTX2N6350 has a wide range of applications. It can be used for audio preamplifiers, RF stages, amplifier stages, and wireless systems. It is also used in many other digital applications, such as radio receivers and digital switches. Its wide range of operating frequencies makes it an excellent choice for a variety of applications.

The JANTX2N6350’s working principle relies on re-circulating positive charge carriers (holes) and negative charge carriers (electrons) within a four-layer base region. This four-layer base region is composed of two emitter and two collector regions. Holes are injected at the emitter regions, while electrons are injected at the collector regions. When a positive voltage is applied at the base region, the injected holes and electrons are swept together, thereby allowing current to flow through the transistor.

The JANTX2N6350 is capable of performing duties as a switch as well as an amplifier. As a switch, it can be used for low-frequency switching applications such as digital switches and sample-and-hold circuits. As an amplifier, its high gain and low noise characteristics allow for applications such as audio preamplifiers and RF stages. The JANTX2N6350 can also be used for a variety of other digital applications, such as encoders, decoders, analog-to-digital converters, and memory devices.

The JANTX2N6350 is a reliable, high performance device and one of the most widely used transistors. It is capable of producing high speeds, low noise, and low distortion in its applications. Its high performance design make it a great choice for many digital applications, including audio preamplifiers, RF stages, and digital switches. Its wide range of operating frequencies makes it a versatile device that can be used for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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