| Allicdata Part #: | 1086-16202-ND |
| Manufacturer Part#: |
JANTX2N6352 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN DARL 80V 5A TO-33 |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 5A ... |
| DataSheet: | JANTX2N6352 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | Military, MIL-PRF-19500/472 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 5mA, 5A |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 5A, 5V |
| Power - Max: | 2W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-213AA, TO-66-2 |
| Supplier Device Package: | TO-66 (TO-213AA) |
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JANTX2N6352 application field and working principle
The JANTX2N6352 is a NPN Silicon Bipolar Transistor or BJT (Bipolar Junction Transistor) manufactured by Texas Instruments. It is classified as a Single BC548 BJT. The JANTX2N6352 has a wide range of applications in the fields of electricity, electrical engineering, electronics, and telecommunications. The working principle of the JANTX2N6352 is based on the flow of charge carriers between two PN junctions formed by the semiconductor material. This process is facilitated by the presence of an electric field, which controls the movement of the charge carriers. The PN junctions are connected in opposite directions, so that the input of one PN junction is connected to the output of the other PN junction. The current flow in the JANTX2N6352 is dependent on the input signal, and it is variable. When the voltage is above the break-over voltage (BV) of the transistor, the current flow is increased. In contrast, when the voltage is below the cut-off voltage (CV) of the transistor, the current flow is decreased. The two terminals of the JANTX2N6352 are known as the emitter and the collector. The emitter is connected to the negative side of the input signal, and the collector to the positive side. The voltage at the emitter is lower than the voltage at the collector, due to the depletion of the base region. The JANTX2N6352 is typically used in power amplifiers due to its high current-gain and high switching speed. The transistor is also suitable for use in voltage-controlled oscillators, signal detectors, and various other electronic circuits. The JANTX2N6352 has several features that make it superior to other types of transistors. These features include its excellent thermal and electrical stability, low noise, high reliability, and compatibility with a wide range of applications. The JANTX2N6352 is ideal for use in a variety of applications, including medical and industrial equipment, automotive electronics, telecommunication systems, and consumer electronics. As such, it is an indispensable component in a wide range of modern electronic devices. In conclusion, the JANTX2N6352 is a highly reliable and efficient single NPN Silicon Bipolar Transistor that is widely used in many applications. It has excellent electrical and thermal stability, low noise, and high reliability, making it ideal for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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JANTX2N6352 Datasheet/PDF