JANTXV1N5711-1

Series:	Military, MIL-PRF-19500/444
Packaging:	Bulk
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	33mA
Voltage - Forward (Vf) (Max) @ If:	1V @ 15mA
Speed:	Small Signal =
Current - Reverse Leakage @ Vr:	200nA @ 50V
Capacitance @ Vr, F:	2pF @ 0V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35 (DO-204AH)
Operating Temperature - Junction:	-65°C ~ 150°C

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Introduction

The JANTXV1N5711-1 is a single Rectifier Diode designed for use in mission-critical aerospace and defense applications. The device has a wide range of features and its impressive electrical performance makes it a very reliable device.

Application Field

The JANTXV1N5711-1 is most commonly used in high-reliability, space grade aerospace and defense applications. The device\'s wide range of features and its impressive electrical performance make it a good choice for these mission-critical applications. The device\'s rugged construction and propagation delay performance make it suitable for a wide variety of harsh environments. The device is suitable for use in surface-mount, air-entry and blind/buried-gate packages. The device is also applicable to radiation-hardened and thermal-hardened applications, as well as applications in which transients, high-frequency noise, and short-exposure to vibration, shock and other environmental effects are present. The device\'s excellent power dissipation capability and high voltage stability make it well suited for applications in which low power consumption and high reliability are required. It is suitable for use in critical high-reliability, aerospace and defense applications that require the highest levels of performance.

Working Principle

The JANTXV1N5711-1 device is a single Rectifier Diode that converts AC to DC voltage. The device is designed to replace the traditional silicon rectifier and reduce the power losses associated with rectification. The device\'s low forward-voltage drop and high-current capability make it an ideal choice for applications that require efficiency. The device\'s high-frequency stability and low parasitic capacitance make it suitable for use in RF power conversion applications. The device\'s low conduction losses and high avalanche current rating make it ideal for use in high-power switching applications. The device\'s low gate-charging current and low leakage current make it suitable for low power and ultra-low power applications. The device is designed to operate in a wide range of temperatures and is capable of withstanding transients, high-frequency noise, and short-exposure to vibration, shock and other environmental effects. The device\'s reverse-recovery performance and electro-static discharge (ESD) immunity make it suitable for applications that need to protect sensitive components from ESD and other types of electrical stresses.

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