JANTXV2N2219AL

Series:	Military, MIL-PRF-19500/251
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	800mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

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JANTXV2N2219AL Application Field and Working Principle

JANTXV2N2219AL is a bipolar transistor, classed a single, manufactured by Microsemi. It is commonly used in telecommunication, instrumentation and automotive applications. As it is a low-power device, its most common use is to act as a driver for other components or to provide signal amplification. Understanding the working principles of JANTXV2N2219AL can help you to choose the right device for your application.

Application Field of JANTXV2N2219AL

JANTXV2N2219AL is a medium-power, low-voltage device designed for use in industrial-scale applications. It has a maximum collector-emitter voltage of 30V and is particularly suitable for use in automotive and instrumentation applications. Its low-power requirements make it an excellent choice for applications in which power conservation is a priority.

Working Principle of JANTXV2N2219AL

JANTXV2N2219AL is a three-terminal, NPN, bipolar transistor. Its collector, base and emitter terminals are connected in the same way as any other bipolar transistor. In addition, it is internally connected as a current amplifier. Its working principle is based on the "doping" of semiconductor material with various elements such as boron, gallium or phosphorus.When a positive voltage is applied to the base of the JANTXV2N2219AL, electrons are injected into the base region and current flows through the transistor. This current is known as "drain current" and is proportional to the voltage applied to the base. As a result of this current, an amplified signal appears at the collector terminal. The JANTXV2N2219AL has a low collector-emitter saturation voltage and can provide up to 190mA continuous collector current. Furthermore, its low-power requirements make it ideal for use in applications in which power consumption is a critical factor.

Conclusion

The JANTXV2N2219AL is a low-power, low-voltage bipolar transistor designed for use in automotive, instrumentation and telecommunications applications. Its NPN design and internal connection as a current amplifier provide an amplified signal at the collector terminal. The device is highly efficient and provides up to 190mA continuous collector current whenbiased correctly. Furthermore, its low power requirement makes it an excellent choice for power-efficient applications.

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