JANTXV2N2329U4 Allicdata Electronics
Allicdata Part #:

JANTXV2N2329U4-ND

Manufacturer Part#:

JANTXV2N2329U4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: SCR 400V 3SMD
More Detail: SCR 400V Standard Recovery Surface Mount U4
DataSheet: JANTXV2N2329U4 datasheetJANTXV2N2329U4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/276
Packaging: Bulk 
Part Status: Obsolete
Voltage - Off State: 400V
Voltage - Gate Trigger (Vgt) (Max): 800mV
Current - Gate Trigger (Igt) (Max): 200µA
Current - Hold (Ih) (Max): 2mA
Current - Off State (Max): 10µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
Description

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Thyristors are devices constructed from alternate layers of P and N type materials. A silicon controlled rectifier, or SCR, is a thyristor-based device that uses a relatively complex four-layer structure. The JANTXV2N2329U4 is an example of a specific type of rectifier commonly found in electronics. This article will explain the application field and working principle of this device.

Application field:

The JANTXV2N2329U4 is a silicon-controlled rectifier (SCR) that can be used to control the flow of electrical current. It can be found in a wide variety of applications such as switching, phase control, and harmonic controls. It is also used to switch high-voltage and high-current applications such as motors, lamp dimmers, and HVAC systems.

The device is also used in industrial automation and process control systems. It can be used to control the power flow in a system, and because of its high stability and control accuracy, it can be used in time-dependent control systems such as thermostats and load switching.

The JANTXV2N2329U4 also has applications in medical devices, for example in patient monitors and certain imaging scanners. It can be used to precisely control the flow of current in such devices and offer high accuracy and repeatability.

Working Principle:

A SCR is constructed from four layers of semiconductor materials. The layers are built up on top of each other and each layer has specific functions. The two outer layers are built from N type materials, while the two inner layers are constructed from P type materials.

When the device is in its ‘OFF’ state, there is no conduction of current between the P and N layers. However, when a positive voltage is applied to the gate, electrons become stored in the gate layer and this creates a conducting bridge between the P and N layers. This causes current to flow between the P and N layers and the device is said to be in its ‘ON’ state. The device will remain in the ‘ON’ state until the gate voltage is removed, or the current decreases below a certain level.

The JANTXV2N2329U4 is an SCR that is designed to handle high voltages and currents. It can handle voltages up to 600V and is designed for currents of up to 1600A. It is a robust device that offers a high level of control and reliability.

Conclusion:

The JANTXV2N2329U4 is an SCR device that can be used in a variety of applications. It has higher stability and control accuracy than traditional components and can be used in high-voltage and high-current applications. The device is well-suited to industrial automation, process control, medical and imaging applications.

The specific data is subject to PDF, and the above content is for reference

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