Allicdata Part #: | 1086-3058-ND |
Manufacturer Part#: |
JANTXV2N2484UB |
Price: | $ 15.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 60V 0.05A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 50mA 360mW Surfa... |
DataSheet: | JANTXV2N2484UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 13.80520 |
Series: | Military, MIL-PRF-19500/376 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 2nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 225 @ 10mA, 5V |
Power - Max: | 360mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | -- |
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A Bipolar Junction Transistor (BJT) is an electronic device used to create an amplified current or voltage signal. The JANTXV2N2484UB is a BJT featuring an NPN construction with a maximum current gain of 800m AMP and a maximum power dissipation of 250m W which makes it suitable for applications requiring a medium power level. This transistor has a dual PNP type which allows it to be used for a wide range of applications.
The JANTXV2N2484UB is a single-ended type BJT which means it has one collector, one base and one emitter. The collector and emitter are formed as a single unit, with the base extending outward from the remaining sides. When the base voltage is increasing, current starts to flow between the collector and the emmitter.
On application of the JANTXV2N2484UB the collector voltage is normally higher than the base voltage, however when the base current is increased the collector voltage decreases. This kind of operation is known as common emitter configuration which is used in majority of BJT amplifier circuits. The JANTXV2N2484UB is capable of amplifying both small and large signals due to its high current gain.
BJTs can be used for a variety of applications that require amplification of current or voltage such as audio amplifiers, power supplies, motor drivers, switching circuits, sensing circuits and computing circuits. The JANTXV2N2484UB can be used for amplification of small and moderate sized audio signals, driving small DC motors and switching circuits. It is also used in circuits requiring a medium current level such as DC-DC converters and power supplies.
In terms of circuitry, the JANTXV2N2484UB requires an external bias to control and design its characteristic curves. This can be done by using a simple voltage divider for the base-emitter part of the circuitry and a current source for the collector-emmitter part. The voltage divider is used to provide the emitter bias voltage, while the current source is used to control the collector current.
In general, the working principle of the JANTXV2N2484UB is simple. When a small base current is applied, a large collector current is generated, thus making it an active device in the circuit. This active device can be used to switch or amplify a voltage or current level in a circuit. The working of the JANTXV2N2484UB is usually controlled by external control signals such as a current source or a voltage divider.
In conclusion, the JANTXV2N2484UB is a medium power BJT transistor used for various applications such as audio amplifiers, motor drivers, switching circuits and power supplies. It is a single-ended type BJT with a maximum current gain of 800m AMP and a maximum power dissipation of 250m W. For operation, it requires an external bias such as a voltage divider for the base-emmitter part and a current source for the collector-emitter part. Thus, we can see that the JANTXV2N2484UB is a versatile BJT device used in a wide range of amplifier and switching circuits.
The specific data is subject to PDF, and the above content is for reference
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