Allicdata Part #: | 1086-20761-ND |
Manufacturer Part#: |
JANTXV2N2906AUA |
Price: | $ 25.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 60V 0.6A |
More Detail: | Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surf... |
DataSheet: | JANTXV2N2906AUA Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 23.25640 |
Series: | Military, MIL-PRF-19500/291 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, No Lead |
Supplier Device Package: | 4-SMD |
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JANTXV2N2906AUA is an NPN transistor manufactured by Microsemi Corporation and falls under the Transistors - Bipolar (BJT) - Single category. It has a maximum collector-emitter voltage of 40V and is rated for a maximum collector current of 5A. The JANTXV2N2906AUA is intended for use in applications where high-frequency operation is essential.
The primary purpose of the JANTXV2N2906AUA is to provide amplification. It achieves this by allowing a small current to control a much larger current. This is accomplished by a process called biasing, which is the application of an electrical signal to a transistor to produce a certain output current. In a NPN transistor, the signal is applied to the emitter, which then controls the current through the collector. The signal is also transmitted to the base, which influences the collector current.
To understand how the JANTXV2N2906AUA works, it is important to first understand the structure of an NPN transistor. An NPN transistor is composed of a base, a collector, and an emitter. The base is the input signal to the transistor, while the collector is the output. The emitter is the region through which current flows from the collector to the base. The current flow is controlled by a bias voltage, which can be either positive or negative. The current through the collector is then determined by the charge on the base.
When the JANTXV2N2906AUA is used, a bias voltage is applied to the base to produce a certain current flow. This voltage can be adjusted to control the gain and other parameters of the transistor. When the bias voltage is low, the transistor is said to be in the cutoff region, meaning that no current is flowing from the collector to the emitter. When the bias voltage is high, the transistor is said to be in the saturation region, meaning that the current flow is at its maximum level. The voltage applied to the base controls the amount of current that can pass through the collector.
The JANTXV2N2906AUA transistor is widely used in applications that require high-frequency operation. This is due to its wide range of maximum collector-emitter voltage (40V) and maximum collector current (5A). It is used in radio-frequency amplifiers, radio receivers, and high-frequency amplifier circuits. It is also used in switches and voltage regulators. In addition, the JANTXV2N2906AUA is used in power supplies and audio circuits.
In summary, the JANTXV2N2906AUA transistor is a NPN transistor that falls under the Transistors - Bipolar (BJT) - Single category. It is rated for a maximum collector-emitter voltage of 40V and a maximum collector current of 5A. It is used in applications that require high-frequency operation, such as radio-frequency amplifiers, radio receivers, and high-frequency amplifier circuits. In addition, the JANTXV2N2906AUA is used in switches, voltage regulators, power supplies, and audio circuits.
The specific data is subject to PDF, and the above content is for reference
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