JANTXV2N3419 Allicdata Electronics
Allicdata Part #:

1086-20799-ND

Manufacturer Part#:

JANTXV2N3419

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 3A
More Detail: Bipolar (BJT) Transistor NPN 80V 3A 1W Through Ho...
DataSheet: JANTXV2N3419 datasheetJANTXV2N3419 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/393
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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JANTXV2N3419 is a single silicon NPN bipolar transistor with an active region. It is commonly used in audio amplification, broadcast and TV tuner, and general purpose switching applications. The device is especially suited for use in high-power switching and amplification applications.

The JANTXV2N3419 transistor is designed with a high-power and high-current design. It has a typical collector current rating of up to 600 mA. It also has a low noise figure of less than 0.5 dB, making it ideal for a variety of audio applications. Its maximum collector-base voltage rating of 65 V provides it with a wide range of operating potentials.

The transistor comprises three terminals: the base, the emitter, and the collector. The base is the control terminal, the emitter the input terminal, and the collector the output terminal. When a small-signal forward bias is applied to the base-emitter junction, a small current flows, which is amplified in the collector circuit. The current gain (β) of the device is proportional to the amount of current flowing through it. The β for this device is typically 300.

The JANTXV2N3419 is also capable of handling power levels far greater than its maximum collector current rating. It has a high power rating of 15 W and a high power dissipation of about 4 W. This makes it ideal for audio applications that require high-power operation. Additionally, with a maximum collector-emitter voltage rating of 30 V, the device can be used in high-power switching applications.

The JANTXV2N3419 also has a wide frequency range, with a response frequency of 117 MHz. This makes it suitable for any RF application, allowing it to deliver maximum power to the load. The high-frequency response also ensures a low-distortion signal.

JANTXV2N3419 is a high-performance single silicon NPN bipolar transistor with a wide range of applications. It is especially suited for use in audio amplification, broadcast and TV tuner, and general purpose switching applications. Its high power, wide frequency range, and low noise make it ideal for a variety of audio and RF applications. With its high power rating of 15 W and wide frequency response, it is sure to deliver optimum performance.

The specific data is subject to PDF, and the above content is for reference

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