Allicdata Part #: | 1086-20878-ND |
Manufacturer Part#: |
JANTXV2N3635UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 140V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 140V 1A 1.5W Surface... |
DataSheet: | JANTXV2N3635UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | Military, MIL-PRF-19500/357 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-SMD |
Description
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JANTXV2N3635UB application field and working principle
IntroductionThe JANTXV2N3635UB is a PNP Bipolar Junction Transistor (BJT) with a gain of 2300, a Collector-Emitter voltage of 150V, and a Collector-Base voltage of 150V. This makes it suitable for high-voltage applications such as power switching, motor control, and semiconductor applications. This article will discuss the application fields and working principles of the JANTXV2N3635UB.Application FieldThe JANTXV2N3635UB can be used in a variety of applications because of its high voltage capabilities, high gain, and fast switching speed. It is commonly used in motor control systems, since it can power large motors and is able to withstand surge current loads. It is also used in power supplies, inverters, and rectifiers, due to its high current and power switching capability. The JANTXV2N3635UB is also suitable for applications such as automotive and industrial electronics, where the ability to handle high voltage is essential.Working PrincipleThe JANTXV2N3635UB is a PNP type Bipolar Junction Transistor (BJT). It is made up of three layers: the base, collector, and emitter regions. A voltage is applied to the base, which controls the flow of current between the collector and the emitter. The amount of current that can flow is proportional to the voltage applied to the base. The JANTXV2N3635UB is made with low-saturation characteristics, meaning that the transistor can handle large currents without becoming saturated.ConclusionThe JANTXV2N3635UB is a PNP type Bipolar Junction Transistor (BJT) that is suitable for high-voltage applications and power switching. It is ideal for applications such as motor control, semiconductors, automotive and industrial electronics, power supplies, and rectifiers. Its high gain, low saturation, and fast switching times make it a popular choice for applications requiring high power and voltage.The specific data is subject to PDF, and the above content is for reference
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