Allicdata Part #: | 1086-3081-ND |
Manufacturer Part#: |
JANTXV2N3700UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 80V 1A UB |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1A 500mW Surface... |
DataSheet: | JANTXV2N3700UB Datasheet/PDF |
Quantity: | 1000 |
Series: | Military, MIL-PRF-19500/391 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-UB (2.9x2.2) |
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JANTXV2N3700UB is a single bipolar junction transistor (BJT) that is suitable to be used in high gain and high temperature applications. It is often used in amplifier circuits and logic circuits, especially in applications where large currents and high temperatures may be encountered. In this article, we will discuss the application fields and working principle of JANTXV2N3700UB.
JANTXV2N3700UB is an NPN general purpose transistor with a built-in collector-base resistance of 100 kilohms. It has an Hfe of 2.2V, a collector current of 12A, and a collector-emitter voltage of 25V. It has an operation frequency of around 10MHz, making it suitable for several high-frequency applications. The device is particularly well-suited for use in signal switching and amplifying applications, because it is capable of operating at a much lower voltage than many of its analog counterparts.
In addition to its robustness, JANTXV2N3700UB also has many other appealing features. It has a very low saturation voltage and fast switching speed, which makes it ideal for use in high-frequency applications. Additionally, the device comes with a power dissipation rating of 120 watts, which is quite impressive for an NPN transistor. Finally, the device is quite inexpensive, making it cost effective for many applications.
Now, let us look at JANTXV2N3700UB’s application fields. As mentioned, the device is ideal for use in signal switching and amplifying applications. It is particularly well-suited for use in circuits that need a low saturation voltage and where fast switching speed is required. Additionally, JANTXV2N3700UB is often used in high temperature applications, as it can operate at temperatures of up to 125 degrees Celsius. Finally, the device can also be used in many motor control circuits, such as those used for automotive and communications applications.
Finally, we will discuss the working principle of JANTXV2N3700UB. As all other NPN transistors, JANTXV2N3700UB works by allowing currents to flow in one direction when a small current is applied to its base. The small current applied to the base controls the much larger amount of current flowing through the collector-emitter region. When the base current is increased, more current flows through the collector-emitter region, and the device starts to act as an amplifier. When the current applied to the base is decreased, the collector current decreases, and the device starts to act as a switch.
In conclusion, JANTXV2N3700UB is a single bipolar junction transistor (BJT) that is suitable for use in high gain and high temperature applications. It has many features, such as a low saturation voltage and fast switching speed, that make it ideal for use in signal switching and amplifying applications. Additionally, it is quite inexpensive, making it a cost-effective device for many applications. Finally, the device works by controlling the current flow between the collector and emitter regions, allowing it to act as an amplifier or switch depending on the input current.
The specific data is subject to PDF, and the above content is for reference
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