JANTXV2N3766 Allicdata Electronics
Allicdata Part #:

1086-20914-ND

Manufacturer Part#:

JANTXV2N3766

Price: $ 27.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 60V 4A
More Detail: Bipolar (BJT) Transistor NPN 60V 4A 25W Through H...
DataSheet: JANTXV2N3766 datasheetJANTXV2N3766 Datasheet/PDF
Quantity: 1000
100 +: $ 24.98440
Stock 1000Can Ship Immediately
$ 27.49
Specifications
Series: Military, MIL-PRF-19500/518
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Power - Max: 25W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66
Description

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A bipolar junction transistor (BJT) consists of three terminals connecting three doped semiconductor regions. These three terminals are called emitter(E), base(B) and collector(C). BJTs are current-controlled devices, meaning that a small current in the base can control the flow of a much larger current between the collector and emitter.

The JANTXV2N3766 is a high-power NPN Bipolar Junction Transistor (BJT) which is ideal for use in white LED applications. It is rated for low voltage and high current at a maximum collector–emitter voltage of 45V. This makes it ideal for use in portable electronic applications where power dissipation and voltage are limited.

The JANTXV2N3766 is designed to achieve superior high frequency performance while minimizing both its on-resistance and power consumption. The device is manufactured using a planar process and has an optimized safe operating area that ensures stable operation while dissipates very low gate-source voltage.

The operating principle of the JANTXV2N3766 is much simpler than that of other transistors. In this device, a base-emitter junction changes the current flow between the collector and emitter by increasing or decreasing the forward bias voltage between the base and emitter. These two terminals are separated by a thin layer of metal oxide semiconductor (MOS) which acts as a gate. By controlling the voltage at the gate, current is allowed to flow or blocked from flowing around the entire BJT.

The JANTXV2N3766 is most commonly used for amplifying and switching applications. It is often used in audio amplifiers and Class D amplifiers and can be used to amplify signals from low frequency to mid-band frequencies and up to 10MHz. Additionally, it can be used as a low-noise, low-power switching device in a variety of applications such as power management and motor control. In motor control applications, it can be used as a power switch to keep switching losses to a minimum and increase the efficiency of the system.

Thanks to its low voltage and high current rating, the JANTXV2N3766 is also suitable for use in white LED applications where it can be used to drive up to three white LED strings. This makes it a great choice for LED lighting applications where power dissipation and LED brightness must be controlled.

In summary, the JANTXV2N3766 is a high-power NPN Bipolar Junction Transistor that is suitable for a wide range of different applications. It is capable of driving up to three white LED strings, and can be used for purposes such as audio amplifying and motor control. Its operating principle is based on controlling the voltage at a gate in order to vary the current flow between the collector and emitter.

The specific data is subject to PDF, and the above content is for reference

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