JANTXV2N4957

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The JANTXV2N4957 is a transistor designed specifically for use in military and space-level applications. It is a type of bipolar junction transistor (BJT) designed for radio frequency (RF) applications. The JANTXV2N4957 has an extremely low noise figure, an excellent gain uniformity over temperature, and a high “mean time between failures” (MTBF) rating, making it a popular choice for use in military and space-level applications.

The JANTXV2N4957 consists of two p-type layers sandwiched between an n-type base to form an NPN BJT. It is a small package transistor, measuring in at just 0.125” x 0.06” x 0.04” (3.2 mm x 1.5 mm x 1.0 mm). The JANTXV2N4957 operates in frequencies up to 2.5 GHz. It has a gain between 5.5 – 15.5 dB, a gain flatness of 0.5 dB over temperature, and a noise figure of 1.5 dB.

The JANTXV2N4957 is designed to operate within the -65℃ to +125℃ temperature range, making it an ideal choice for use in space-level applications. It is also designed with a high RF input/output return loss, making it suitable for use in power amplifier and low noise amplifier designs. In addition, it features excellent thermal stability and high junction stability resistance over temperature, making it a very reliable transitor.

The working principle of the JANTXV2N4957 is relatively simple. When a voltage is applied to its base, electrons from the n-type layer flow across the p-n junction. As electrons flow out of the n-type layer, holes start moving into the p-type layer. This current flow causes the voltage across the base-collector junction to increase, which in turn increases the current in the collector-emitter circuit, resulting in amplified signal.

Since it offers excellent noise performance, high power output and reliability, the JANTXV2N4957 is ideal for use in a wide range of military and space-level applications, such as communications receivers, power amplifiers, satellite downlinks, radar and navigation systems. Additionally, due to its small size and low cost, it is also becoming increasingly popular for use in other RF applications, such as cellular base stations and low noise amplifiers.

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