JANTXV2N4957UB

The JANTXV2N4957UB is a bipolar junction transistor (BJT) in an industry-standard TO-39 case with four leads. It is used mainly for radio frequency (RF) applications, but can be used for other purposes as well. This device is a NPN silicon RF power transistor that is specifically designed for VHF and UHF wideband amplifier applications. It has a maximum collector-emitter voltage (Vce) of 30 volts and is capable of up to 5 watts of power output.

The JANTXV2N4957UB consists of three terminals (the collector, base, and emitter) and is designed to operate in either an NPN or PNP configuration. When operating in the NPN configuration, the base terminal of the transistor is connected to ground while the collector is connected to a positive voltage. When the base is given a negative signal the collector-emitter voltage (Vce) decreases, allowing current to flow through the transistor. In the PNP configuration, the base terminal is connected to a positive voltage and the collector is connected to ground. Applying a positive signal to the base causes the voltage across the collector-emitter to increase and current to flow through the transistor.

The JANTXV2N4957UB is a high-power device that can be used for a variety of RF applications. It is particularly well-suited for power amplifier applications, as it can provide up to 5 watts of output. It is also used in oscillator applications, as it is capable of sustaining a reliable signal at high frequencies and has an adequate gain-bandwidth product. Finally, the device is also used in low-noise amplifiers, as it has a relatively low noise figure and a large current gain-bandwidth product.

The JANTXV2N4957UB is a high-power device that is designed for use in a wide range of RF applications. It is a NPN silicon RF power transistor that is ideally suited for VHF and UHF wideband amplifier applications. It has a maximum collector-emitter voltage (Vce) of 30 volts and is capable of up to 5 watts of power output. It is capable of sustaining a reliable signal at high frequencies and has an adequate gain-bandwidth product and a relatively low noise figure.