JANTXV2N5151 Allicdata Electronics
Allicdata Part #:

1086-21010-ND

Manufacturer Part#:

JANTXV2N5151

Price: $ 14.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 80V 2A TO-39
More Detail: Bipolar (BJT) Transistor PNP 80V 2A 1W Through Ho...
DataSheet: JANTXV2N5151 datasheetJANTXV2N5151 Datasheet/PDF
Quantity: 1000
100 +: $ 12.82080
Stock 1000Can Ship Immediately
$ 14.11
Specifications
Series: Military, MIL-PRF-19500/545
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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JANTXV2N5151 is a high voltage NPN power transistor which is primarily used in the industry. It is a type of single bipolar junction transistor (BJT). The JANTXV2N5151 is capable of withstanding large voltage and current ratings and so is used in many applications ranging from low level switching to high power amplifiers. It is also used in many applications such as audio amplifiers, clock oscillators, switching voltage regulators, and motor control circuits.

The JANTXV2N5151 is designed to operate at collector-emitter voltages ranging from 30 volts to 1000 volts. It has very good reverse voltage capability and is used in many types of applications where the operating current is very small. It is also used in automotive applications where high voltages and currents are required.

The working principle of the NPN power transistor is based on the electron current flow principle. In general, BJTs are constructed with three terminals, called the emitter, base and collector. When a small current is passed through the base-emitter junction, electrons are attracted towards the positive voltage at the collector, while holes are repelled away. This causes a larger current to flow through the collector-emitter junction. This is known as \'forward bias\'.

In the case of NPN power transistors, there is also a small reverse current which flows from the collector to the base. This current helps to maintain the cutoff voltage, known as Vce(sat). This current depends upon the amount of current flowing from the emitter to the collector. In order to reduce the turn on voltage, BJTs have a diode connected between the collector and base terminals, called the \'Miller Plateau\'.

The JANTXV2N5151 is a good choice for high power applications requiring high voltage, high current and low switching losses. Its main advantages include: high voltage capability up to 1000 volts, low on-state resistance, high power dissipation and low switching losses. It is available in a variety of configurations, including NPN and PNP transistors, and can be packaged in a variety of packages ranging from single-chip devices to multi-chip packages.

The JANTXV2N5151 is a highly reliable, high voltage, NPN power transistor which is ideal for a variety of applications. Its main advantages include high voltage capability, low on-state resistance, low switching losses, and high power dissipation. It is a great choice for high voltage, high current applications such as audio amplifiers, clock oscillators, switching voltage regulators, and motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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