Allicdata Part #: | 1086-16166-ND |
Manufacturer Part#: |
JANTXV2N5672 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 120V 30A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 30A 6W Through ... |
DataSheet: | JANTXV2N5672 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/488 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 5V @ 6A, 30A |
Current - Collector Cutoff (Max): | 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 15A, 2V |
Power - Max: | 6W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-3 (TO-204AA) |
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Transistors - Bipolar (BJT) - Single
JANTXV2N5672 is a kind of single tranistors. It is a medium power NPN transistor and is mainly used for power switching circuits and for linear amplification.
Application Field
JANTXV2N5672\'s main application fields include switching circuit, buffer amplifiers, amplifier, audio amplifier, and linear amplifiers etc. It can be used in various types of commercial and industrial applications, such as automotive systems, communications systems, audio systems, computer systems, medical devices, and home appliances, etc.
Working Principle
The main operation principle of JANTXV2N5672 is based on the properties of the NPN transistor. As known, a NPN transistor consists of three layers of semiconductor material, the base, Collector, and Emitter. When voltage is applied to the base terminal, it will result in the flow of current from the collector to the emitter and that is how the power is amplified.
The collector current is controlled by the base-emitter junction. The base-emitter junction acts as a diode and allow the current to flow when the base is forward biased. When the base voltage becomes larger than the forward-biased voltage, the current from the collector will be reduced, resulting in less power amplification.
JANTXV2N5672 has a power gain of 45, which means that it can amplify a signal with up to 45 times more power than the original signal. It is designed to handle up to 500mW of power, making it a suitable choice for high energy applications.
In addition, it is also equipped with protection diodes, which protect the transistor from excessive current. This adds to the overall stability and reliability of the device, making it well-suited for various industrial and commercial applications.
Conclusion
JANTXV2N5672 is a single NPN transistor that is used in various industrial and commercial applications. It has a power gain of 45 and can amplify signals up to 500mW. It also has protection diodes for improved stability and reliability. This transistor is an ideal choice for applications requiring high power amplification.
The specific data is subject to PDF, and the above content is for reference
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