JANTXV2N6298 Allicdata Electronics
Allicdata Part #:

1086-21100-ND

Manufacturer Part#:

JANTXV2N6298

Price: $ 34.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP DARL 60V 8A TO66
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 8A ...
DataSheet: JANTXV2N6298 datasheetJANTXV2N6298 Datasheet/PDF
Quantity: 1000
100 +: $ 31.09200
Stock 1000Can Ship Immediately
$ 34.2
Specifications
Series: Military, MIL-PRF-19500/540
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 64W
Frequency - Transition: --
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)
Description

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The JANTXV2N6298 is widely used in the field of transistors and is classified as a single bipolar junction transistor (BJT). The transistor features high voltage, high current, and high output capability, making it ideal for applications requiring high levels of power.

A single bipolar Junction Transistor (BJT) is an electronic device consisting of three primary components: the collector, base, and emitter. The collector is the negative layer of an electric charge, the base is the control layer, and the emitter is the positive layer of the charge. When a voltage is applied to the base, it causes a current to flow from the collector to the emitter. This current is amplified by BJT transistors due to their internal gain characteristics.

The JANTXV2N6298 utilizes a three-layer structure with a base, collector and emitter. This makes the transistor a creature of both voltage and current and provides it with a unique level of regulation and formability. This type of transistor is well-suited for high-voltage, high-current environments, such as those seen in power supply, light dimming, logic, networking, automotive, and consumer applications.

The operating principle of the JANTXV2N6298 is simple. When an input voltage is applied to the base of the transistor, it modulates the current flow between the emitter and the collector. The base voltage acts as a gate, allowing some current to pass from the collector to the emitter, increasing the flow as the voltage applied to the base is increased. The current increase is referred to as a transistor’s gain. As the gain of the transistor increases, so does its output current.

The JANTXV2N6298 can be used in a variety of applications that require high voltage and high current levels. It is commonly used in power supplies, dimmers, logic systems, and other consumer applications. In a power supply, the transistor is used to regulate the voltage, while in logic systems it is used to create complex circuits and logic gates. In dimmers, the transistor is used to control the flow of current to a circuit, allowing the user to dim or brighten a light source. Additionally, the JANTXV2N6298 can also be used in high voltage, high current systems such as audio amplifiers or power amplifiers.

The JANTXV2N6298 is a powerful single bipolar junction transistor that is highly capable in and high voltage, high current applications. Its three-layer structure and internal gain characteristics make it an ideal solution for a wide range of applications, from power supplies to logic systems and more.

The specific data is subject to PDF, and the above content is for reference

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