Allicdata Part #: | 1086-3097-ND |
Manufacturer Part#: |
JANTXV2N6989 |
Price: | $ 42.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS 4NPN 50V 0.8A TO116 |
More Detail: | Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 80... |
DataSheet: | JANTXV2N6989 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 38.59230 |
Series: | Military, MIL-PRF-19500/559 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | 4 NPN (Quad) |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 14-DIP (0.300", 7.62mm) |
Supplier Device Package: | TO-116 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JANTXV2N6989, a type of Transistors – Bipolar (BJT) – Arrays, has an array of 16 PNP transistors. This particular device is designed and manufactured to provide high-speed switching performance with low power consumption. It is a small signal BJT type array, suitable for digital and analog use. Its optimized design is beneficial for use in digital and analog applications.
The JANTXV2N6989 has several applications, primarily used in digital displays. It is frequently used in automotive electronics and medical devices because of its high speed switching performance and low power consumption. It is also ideal for high-speed amplifiers in analog and digital systems. Other applications include motion detection, audio equipment, and wireless communication systems.
The JANTXV2N6989 contains sixteen individual NPN transistors, configured in an 8x8 matrix arrangement. Each transistor can be individually integrated into the circuit to enable quick switching of the transistor ON and OFF, thus providing a quicker response to the circuit than with a non-integrated version. Also, since the transistors are integrated, there is no need for additional wiring inside the device. This makes it more reliable and saves on space.
The JANTXV2N6989 operates with a gain-bandwidth product (GBW) of 30 MHz, making it suitable for high-speed digital and analog applications. The high-speed switching is provided by the high-gain, low-noise characteristics of the transistors. The low power consumption is due to the low voltage drop across the transistors and the high amplification provided by the transistors.
The JANTXV2N6989 is designed such that it can be directly mounted on a printed circuit board and connected with other components and wiring. The circuit board is usually designed such that conduction from each individual transistor is sequentially arranged and the control signals can be routed to the corresponding transistor. The control signals are then used to control the current flow through the transistors.
The JANTXV2N6989’s working principle is based on the fact that a voltage applied to its base will cause a flow of current through the transistor. This current will then change the state of the transistor, either through turning it off or on, depending on the type of the transistor. The current flowing through the transistor will be proportional to the voltage applied to its base, and the voltage applied to its collector terminal. This allows current to be selectively varied according to the signals provided to the transistors.
In conclusion, the JANTXV2N6989 is a type of Transistors – Bipolar (BJT) – Arrays designed for digital and analog applications. It is designed to provide high-speed switching with low power consumption. Its working principle is based on the principle that a voltage applied to its base will cause current to flow through the transistor, thus controlling its ON and OFF states. The JANTXV2N6989 is widely used in many digital and analog applications, such as automotive electronics and medical devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JANTXV1N6141A | Microsemi Co... | 38.35 $ | 1000 | TVS DIODE 6.9V 13.4V C AX... |
JANTX1N6103A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V AXIA... |
JANTX1N6103US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.76V B S... |
JANTX1N6104 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
JANTX1N6104AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V B SQ... |
JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...