KSA940

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

KSA940 Application Field and Working Principle

KSA940 is a kind of trendy and modern transistors – bipolar junction transistor (BJT) - single. With its relatively small size, the KSA940 BJT is widely employed in various modern electronic devices. Its high power dissipation capabilities make it suitable for power amplification and switching applications, enabled with its well-known temperature stability.

The KSA940 is composed of two bases, two collector and one emitter, which are connected electrically by a common source called the gate. It works on the principle of carrier injection. To put it simply, electrons are injected from the emitter and spread to the base, which in turn induce the formation of an inversion layer that stores enough electrons for proper transistor action. In this way the static current path flows across the collector and emitter. When an external voltage is applied across the emitter and collector, the current between the emitter and collector can be modulated by using its gate voltage.

Applications

KSA940 BJT is used in a multitude of different applications, especially power amplifiers, such as car audio amplifiers, musical instrument amplifiers, PA systems, and sound monitors. KSA940 is also one of the most popular transistor used in logic and RF circuits. Due to its relatively low thermal resistance and robust construction, KSA940 is suitable for high-speed circuits which operate at higher power levels. In addition, KSA940 is also used for amplifier combiners, audio frequency balanced modulation, and modulation preamplifiers.

Apart from these uses, KSA940 BJT can also be used as a high-gain voltage amplifier because it offers excellent DC power linearity. Moreover, it is also quite popularly used as an analog switch, digital logic, and buffer circuits.

Properties

KSA940 BJT offers the following properties that make it useful for various applications. Firstly, its maximum collector power dissipation is 800 mW at a 25℃ alcohol temperature and its collector-emitter voltage breakdown is 45 V.

Moreover, its collector-base capacitance is 0.2-0.003 pF in the region of 0 V, its emitter to base capacitance is 200 pF, and its collector capacitance is 0.7 pF under different temperatures.

Additionally, its power gain typically ranges from 50-200 with a maximum frequency of 1 MHz and a high frequency gain of 6-10 dB.

Conclusion

In conclusion, the KSA940 BJT is a high-performance, relatively small sized transistor, that is widely employed for various modern electronic applications due to its excellent power dissipation capabilities and temperature stability. The KSA940 can be used for power amplifiers, audio frequency balanced modulation, PA systems, musical instrument amplifiers, and digital circuits alike.

The specific data is subject to PDF, and the above content is for reference