KSA940H2 Allicdata Electronics
Allicdata Part #:

KSA940H2-ND

Manufacturer Part#:

KSA940H2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 150V 1.5A TO-220
More Detail: Bipolar (BJT) Transistor PNP 150V 1.5A 4MHz 1.5W T...
DataSheet: KSA940H2 datasheetKSA940H2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSA940
Description

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The KSA940H2 transistor is categorized as a Bipolar Junction Transistor (BJT) with a single device type. It\'s a low power NPN transistor that is widely used in commercial applications such as switching, amplification, communications, and more. It is available in a variety of package types for usage in commercial products, industrial applications, and other areas where reliability is paramount.

The KSA940H2 utilizes an NPN semiconductor construction which consists of three layers - the base, the emitter, and the collector. The base layer is the most important since it\'s the other two layers that are connected to it and that allows current flow through the transistor. The emitter is the source of electrons and is connected to the emitter region of the base layer, while the collector is the destination for the electrons and it\'s connected to the collector region of the base layer. This provides an NPN type of operation where current flows from the emitter to the collector when the base voltage is positive.

The maximum power dissipation of the KSA940H2 is 550mW, making it suitable for many low power applications. The transistor also features an operating frequency range of up to 1MHz. It\'s also rated for an operating temperature range of -55 to +125°C. This wide temperature range makes it suitable for use in nearly any environment.

The KSA940H2 has numerous applications in different settings. It can be used as a general purpose switching device, as an amplifier, or as a communications device. It can also be used in the design of logic systems, pagers, and other devices. It\'s also commonly used in audio and video circuitry.

The KSA940H2 transistor has a range of characteristics which make it suitable for all levels of applications. Its high voltage gain, low collector-emitter saturation voltage, and low leakages are some of its distinguishing features. In addition, its package is hermetically sealed, making it resistant to wear and tear, providing longevity and reliability in numerous applications.

The KSA940H2 transistor\'s working principle is simple but highly effective. When a positive voltage is supplied to the base, the electrons from the emitter are attracted to the positive charge and then flow to the collector. This allows for current to flow from the emitter to the collector, thus completing the circuit. This process is known as positive bias and is the primary working principle of transistors.

The KSA940H2 has proven to be a reliable and versatile component in the world of electronics. It\'s an important component in numerous applications and its versatility allows it to be used in many different settings and atmospheres with great results. It\'s a useful component for commercial and industrial applications, as well as for hobbyists and DIY enthusiasts.

The specific data is subject to PDF, and the above content is for reference

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