KSA992FATA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1mA, 6V
Power - Max:	500mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	KSA992

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Introduction

The KSA992FATA is a high-performance bipolar junction transistor (BJT) designed for use in applications requiring high-frequency operation. It is a single, surface-mounted device that is characterized by its low power dissipation, low noise, and fast response to input signals. The device is ideal for use in a wide range of applications including power amplifiers, power switching, and microwave communications.

Structure and Operation

The KSA992FATA is a single, surface-mounted device that is characterized by its low power dissipation and low noise. The device consists of three layers of semiconducting materials: an n-type layer, a p-type layer, and an epitaxial layer. The n-type layer is the collector layer, which collects electric charges. The p-type layer is the base layer, which provides electric voltage to the device. The epitaxial layer is the emitter layer, which produces electric current.When the device is powered on, the electric field generated between the collector and the base causes charge carriers-electrons and holes-to move between them. The electrons in the collector combine with the holes in the base, leaving behind a negative charge in the collector. This results in a base-emitter junction, which reduces the resistance of the device to electric current.The operation of the KSA992FATA relies on a process called “reverse bias operation.” When an external voltage is applied to the device, it creates an electric field that reverses the current flow through the device. This results in a decrease in resistance, allowing higher current to flow through the device.

Advantages

The KSA992FATA is designed for use in applications with high-frequency operation. The device is characterized by its high current gain, low power dissipation, and low noise. The device also has a high switching speed, allowing for fast switching of loads and signals. The device is also designed to operate at very low voltages, making it ideal for use in applications that require low power operation.Another key advantage of the KSA992FATA is its high voltage breakdown voltage. The device is designed to handle up to 1000V, allowing it to be used in high voltage applications.

Applications

The KSA992FATA is most commonly used in applications that require high-frequency operation and low power dissipation.The device is ideal for use in power amplifiers, power switching, and microwave communications. The device is suitable for use in automotive, audio, and aerospace applications. The device can also be used in home entertainment systems, and medical equipment. The device is also used in applications that require high current gain and high switching speeds. The device is also suitable for applications in which low-voltage operation and high breakdown voltage are required.

Conclusion

The KSA992FATA is a high-performance bipolar junction transistor designed for use in applications requiring high-frequency operation. The device is characterized by its low power dissipation, low noise, and fast response to input signals. The device has a high current gain and high switching speeds, making it ideal for use in applications such as power amplifiers, power switching, and microwave communications. The device is also suitable for use in automotive, audio, and aerospace applications. The device can also be used in home entertainment systems, and medical equipment.

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