Allicdata Part #: | KSA940TU-ND |
Manufacturer Part#: |
KSA940TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 150V 1.5A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 1.5A 4MHz 1.5W T... |
DataSheet: | KSA940TU Datasheet/PDF |
Quantity: | 96 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSA940 |
Description
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The KSA940TU Bipolar Junction Transistor (BJT) is an N-channel, single-transistor device used in a variety of electronic applications. This type of transistor is widely used in amplifiers, switches, and logic-level conversions. In this article, we will discuss the application field and working principle of KSA940TU. The KSA940TU is a general-purpose NPN transistor that can be used in a variety of circuits and applications. Its maximum collector current rating is 120mA and its maximum power dissipation is 800mW. Furthermore, it has a maximum collector-emitter voltage of -60V and a maximum base-emitter voltage of -5V. It has an EBC Pinout, with base-to-emitter current gain (hFE) values of 42-58 at a collector current of 5mA. The collector-emitter saturation voltage (VCE Sat) is 0.2V at a current of 5mA. The KSA940TU is suitable for a variety of applications including amplifier circuits, driver circuits, and switching circuits. It is also used in logic level conversion circuits, due to its ability to maintain a linear current-to-voltage transfer ratio when operating in saturation mode. The working principle of the KSA940TU BJT is based on the transfer of the electrical charge between a base-emitter junction and a collector-emitter junction. The base-emitter junction is forward biased in order to inject electrons into the base region. The collector-emitter junction is reverse biased, allowing the electrons to travel in the opposite direction, through the collector region. This process can be used to model the behavior of the transistor in various modes, such as amplification, switching, and logic-level conversion. In the "amplification" mode, the KSA940TU is used to increase the input voltage and current. The transistor is biased with a small base current, which increases the gain of the output current. This increases the collector current, which is proportional to the output voltage. In the "switching" mode, the transistor is used to switch a load that is connected to the collector of the transistor. The input signal applied to the base of the transistor is used to control the biasing of the collector-emitter junction, which determines the on/off state of the transistor. In the "logic-level conversion" mode, the transistor is used to convert DC logic signals from one voltage level to another. For example, it can be used to convert a 5V logic signal to a 3.3V logic signal. This is accomplished by operating the transistor in a saturating mode, and controlling the collector current with the input voltage. The KSA940TU BJT is an incredibly versatile electronic device, capable of being used in a variety of applications. It is capable of operating in three distinct modes, making it suitable for use in both analog and digital circuits. With its wide range of parameters, the KSA940TU is a great choice for any circuit designer.The specific data is subject to PDF, and the above content is for reference
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