KSB564ACGBU

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KSB564ACGBU is a Transistors - Bipolar (BJT) - Single type device, and it can be used in various applications. This article will discuss its application field and working principle.

This KSB564ACGBU transistor is mainly used for power amplifier, audio amplifier, and high frequency switching applications. It is designed as high-power, high-voltage, high-frequency, and low saturation voltage bipolar junction transistor (BJT). The KSB564ACGBU can handle maximum collector current of 3A and maximum collector-emitter voltage of 70V. It also has high production isolation at high frequency, with a minimum isolation frequency of 10GHz.

The KSB564ACGBU has three terminals, collector, base and emitter. The collector is connected to the power supply, the base is used to control the current flow between collector and emitter, and the emitter is connected to ground. The collector-base-voltage (Vcbo) and collector-emitter-voltage (Vceo) of this device are 70V and 50V, respectively. The Vcb and Vce ratings are 68V and 12V, respectively. The transistor features a hFE (current gain) more than 50, at a base-emitter voltage of 1.5V.

The working principle of the KSB564ACGBU is based on the properties of a BJT. A BJT is a semiconductor device with three terminals, collector, base and emitter. The base-emitter junction is forward biased and the collector-base junction is reverse biased. When the base-emitter junction is forward biased, a small current flows through it and the collector-base junction is reverse biased. This reverse bias allows the electrons from the base region to move towards the collector. This, in turn, causes an increase in the current in the collector and collector current increases. As the collector current increases, the base-emitter voltage increases as well and thereby reduces the current in the base. This process is known as the inner feedback loop and is what allows the BJT to amplify the current.

The KSB564ACGBU is a high-power, high-voltage and high-frequency BJT. It can be used in power amplifier, audio amplifier, and high frequency switching applications. It can handle maximum collector current of 3A and maximum collector voltages of 70V. It also has high production isolation at high frequency, with a minimum isolation frequency of 10GHz. This makes it an ideal choice for many applications.

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