Allicdata Part #: | KSB564ACYTA-ND |
Manufacturer Part#: |
KSB564ACYTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 1A 110MHz 800mW T... |
DataSheet: | KSB564ACYTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 1V |
Power - Max: | 800mW |
Frequency - Transition: | 110MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSB564 |
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Transistors - Bipolar (BJT) - Single
The KSB564ACYTA is a family of NPN monolithic silicon transistors developed for high-frequency applications operating at frequencies between 40 MHz and 1 GHz. The KSB564ACYTA are ideal for use in automotive applications due to their high frequency, low saturation voltage, and low collector-emitter saturation voltage. They are especially useful in applications such as amplifiers, oscillators, and switches where high-frequency operation is required.
The KSB564ACYTA transistors feature an NPN construction and are integrated in a hermetic ceramic package with a 65 °C maximum temperature operating range. The features of this transistor make it well suited for use in high-frequency, high-efficiency and high-temperature operation. The current gain (hFE) of this device is typically around 100, while its breakdown voltage is 150V. The maximum collector-emitter voltage (VCE) is 75Vand the power dissipation is up to 500mW.
The working principle of the KSB564ACYTA is quite straightforward. When a voltage is applied across the transistor’s base and emitter, the electrons flow from the emitter to the base, creating a current. This current is then amplified and applied to the collector. The amount of amplification depends on the transistor’s characteristics, such as hFE and VCE. Once the current is collected, it can be used to produce a signal or any other desired output.
The KSB564ACYTA transistors are widely used in many applications due to their excellent performance. In automotive applications, they are used in amplifiers, oscillators, and switches, as well as in receivers and data converters. In other fields, they are commonly employed in wireless communication systems, personal digital assistants (PDAs), and portable radios. The transistor is also frequently used in robotic control systems. In addition, they are used in circuit designs such as Class A and Class C RF amplifiers.
The KSB564ACYTA transistors provide reliable and efficient performance when deployed in any of the applications mentioned above. Additionally, they are cost-effective, making them a great choice for budget-conscious projects. Ultimately, it is important to understand the characteristics and applications of the KSB564ACYTA transistors to ensure that they are used properly and efficiently.
The specific data is subject to PDF, and the above content is for reference
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