KSB564ACOBU Allicdata Electronics
Allicdata Part #:

KSB564ACOBU-ND

Manufacturer Part#:

KSB564ACOBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 1A 110MHz 800mW T...
DataSheet: KSB564ACOBU datasheetKSB564ACOBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 800mW
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSB564
Description

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The KSB564ACOBU model is a type of bipolar junction transistor (BJT) that is used in many different applications. It has a very high switching speed, a low power dissipation, and excellent thermal performance. It is also very reliable and robust. Because of its high frequency performance, it is ideal for radio frequency (RF) applications.

The KSB564ACOBU is a single bipolar junction transistor (BJT) manufactured on a standard silicon substrate. The die size is 564 mils (14.28 mm) and is formed by a NPN or PNP structure. The B-E and C-E breakdown voltages are 150 and 200V, respectively. It is capable of a maximum power dissipation of 400mW, collector current of 200mA, and a frequency range of up to 150MHz. The transistor is available in either through-hole or surface mount packages.

The KSB564ACOBU is used in a variety of applications such as audio amplifiers, video amplifiers, and radio frequency (RF) circuitry. It can also be used as an active element in switching applications such as relays and solenoids. The transistor is also used in automotive applications such as vehicle control systems, air conditioning systems, and fuel injection systems.

The working principle of the KSB564ACOBU transistor is based on the inter-base injection mechanism. This means that an electric current is injected from an external source into the base of the transistor. This current then flows through the inter-base injection layer and generates a charge which is responsible for conduction between the collector and the emitter.

The KSB564ACOBU transistor has a few features which make it attractive for use in many different applications. It has a low thermal resistance which means it will not overheat in high-temperature applications. It also has a low on-resistance which reduces the amount of power consumed when the transistor is in operation. Additionally, it has a high collector current and a high switching speed, making it suitable for use in high-frequency applications.

When used in radio frequency (RF) applications, the KSB564ACOBU transistor works by creating an oscillator circuit. This circuit is composed of three main components; the transistor, a feedback resistor, and a tank circuit. The transistor is used to provide the oscillations while the tank circuit and the feedback resistor are used to set the frequency of the oscillations.

Overall, the KSB564ACOBU model is ideal for use in a range of different applications. It has a low thermal resistance, high switching speed, and low power dissipation, making it suitable for use in audio, video, and RF applications. Additionally, it has a wide voltage and current range, making it suitable for use in automotive systems.

The specific data is subject to PDF, and the above content is for reference

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