KSB564AGBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 1V
Power - Max:	800mW
Frequency - Transition:	110MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	KSB564

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Introduction

KSB564AGBU is a single, bipolar junction transistor (BJT) that has been developed by the Kec Labs. It is designed to be used in a myriad of applications, and is well-suited for high speed switching, high frequency amplifiers, and power management applications such as automotive, industrial, and modern microprocessors. In this article, we will discuss the application field and working principle of the KSB564AGBU.

Application Field

The KSB564AGBU is a high-performance, low-noise BJT designed for use in high-performance systems and applications. It is designed to be used in a variety of circuits and systems, including switching circuits, power management boards, and audio amplifiers. Moreover, due to its high gain and low noise characteristics, it is particularly well suited for high-speed switching, high-frequency amplifiers, and power management applications such as automotive, industrial, and modern microprocessors.

Characteristics

The KSB564AGBU features an extended current gain range of 10 to 50, a low input noise voltage of 500 μV, a voltage amplification factor of 90, and a low saturation voltage of 0.3V. Furthermore, it is rated at a maximum collector power dissipation of 400 mW, has a maximum collector-emitter voltage of 45V, and can operate up to a maximum collector current of 4A.

Packaging

The KSB564AGBU is available in a variety of packages, including both through-hole and surface mount packages. The through-hole package is offered in a TO-97(I) lead form, while the surface mount package is offered in an SOT-223 lead form. Both packages are rated with a maximum allowable ambient temperature of 125°C.

Working Principle

The KSB564AGBU operates on the principle of a current gain between its base and collector. When current flows in the base-emitter junction of the BJT, an amplified current is generated between the collector and emitter. This current is determined by the gain of the transistor and is typically in the range of 10 to 50. This amplifier current is then used to drive the load, thus allowing it to be powered on or off depending on the current gain of the transistor.

Conclusion

The KSB564AGBU is a high-performance, low-noise BJT designed for use in high-performance systems and applications. It features an extended current gain range of 10 to 50, a low input noise voltage of 500 μV and is rated for a maximum collector power dissipation of 400 mW. Furthermore, the KSB564AGBU is available in a variety of packages, including both through-hole and surface mount packages, and operates on the principle of a current gain between its base and collector. With these features and capabilities, the KSB564AGBU is an ideal choice for high-speed switching, high-frequency amplifiers, and power management applications such as automotive, industrial, and modern microprocessors.

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