KSD401G Allicdata Electronics
Allicdata Part #:

KSD401G-ND

Manufacturer Part#:

KSD401G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 150V 2A TO-220
More Detail: Bipolar (BJT) Transistor NPN 150V 2A 5MHz 25W Thro...
DataSheet: KSD401G datasheetKSD401G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 400mA, 10V
Power - Max: 25W
Frequency - Transition: 5MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSD401
Description

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The KSD401G is a high-function transistor that is used in a variety of applications. This type of transistor is classified as a single-bipolar Junction Transistor (BJT) and it is an efficient device for switching and regulating parameters in circuits. It offers a variety of features, including low leakage current, low saturation voltage, high breakdown voltage, wide temperature range and a wide operating voltage range.

The KSD401G is used in many different types of applications, including switching and regulating in circuits, motor starters, power relays, and more. Its high speed switching capability and low saturation voltage are especially advantageous when it needs to be used in high frequency, low voltage circuits. This transistor is also often used in timing circuits, power supplies, and other similar applications.

The KSD401G is a type of BJT transistor, which is a semiconductor device with three or more layers of semiconductor materials. The material used in BJTs are typically silicon or germanium, though other materials can be used as well. The different layers have different properties and functions and it is the combination of these two layers that give the BJT its unique properties.

The most important feature of the KSD401G is its working principle, which is based on the principle of electrical current conduction. In a KSD401G, the collector-base junction (CBE) is made up of a semiconductor, such as silicon or germanium, which allows current to be conducted from the collector to the base region when it is stimulated by an electric voltage or current. When the voltage across the CBE exceeds a certain level, called the cutoff voltage, an avalanche breakdown occurs and current flows from the collector to the base, turning on the transistor.

The KSD401G also includes an emitter-base junction (EBE), which allows current to flow from the emitter to the base when a voltage is applied across it. This junction is used to control the amount of current that can pass through the CBE, as it allows current to only flow to the base when the voltage is above a certain level. This junction also creates a diode effect, which increases the overall current gain of the transistor.

The KSD401G is a very versatile transistor and it is commonly used in many different types of applications. It is an important component in circuits that require high speed switching, regulating, or timing. It is an efficient and reliable device that is capable of handling high voltages, high frequency applications, and has a wide operating temperature range.

In conclusion, the KSD401G is an excellent transistor for a variety of applications. It is a single-bipolar Junction Transistor that works on the principle of electrical current conduction and is capable of high speed switching and regulating parameters in circuits. This device also has a low leakage current, a low saturation voltage, and a wide temperature range, making it an ideal choice for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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