KSD471ACGTA Allicdata Electronics

KSD471ACGTA Discrete Semiconductor Products

Allicdata Part #:

KSD471ACGTATB-ND

Manufacturer Part#:

KSD471ACGTA

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW T...
DataSheet: KSD471ACGTA datasheetKSD471ACGTA Datasheet/PDF
Quantity: 1000
2000 +: $ 0.04549
6000 +: $ 0.03956
10000 +: $ 0.03362
50000 +: $ 0.02967
100000 +: $ 0.02637
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 800mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSD471
Description

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The KSD471ACGTA is an epitaxial planar silicon NPN transistor that is ideally suited for use as a high-speed amplifier and switch. It is a low-power device with a power dissipation of 150 mW and is designed for operating at frequencies up to 3.0 MHz. This transistor is a single, bipolar junction transistor (BJT) that consists of two p-n junctions connected in series. It is a type of field-effect transistor (FET) that operates on the principle of electric field induced conduction. The KSD471ACGTA can be used in various applications, such as amplifiers, switches, oscillators, converters, and more.

The KSD471ACGTA has an active region where the essential device characteristics are determined. Its structure consists of a single, N-channel, diffused resistance path between an n-type region and a p-type region. At the very bottom of the device is the emitter which injects electrons into the base region, where the current flow is regulated or turned off completely by the collector. This creates the transistor action. The current flow between the emitter and collector is relatively unaffected by changes in the base-to-emitter current, which is referred to as "current gain".

The KSD471ACGTA is able to operate at high voltages up to 50 volts, making it a great choice for applications involving higher voltage power supplies. Its high-speed switching capabilities are due to its fast turn-on and turn-off times, which are as low as 10 ns. It is also designed to handle high-frequency signals up to 3.0 MHz, making it ideal for use in a range of communications and networking circuits. Its low capacitiveness, combined with its low power consumption, makes it an excellent choice for multiple applications.

The KSD471ACGTA silicon NPN transistor has a wide variety of uses in various applications. It’s most commonly used in high-speed, high-current amplifiers and switches. It is also used in oscillators, converters, amplifiers, receivers, transmitters, and more. Its low capacitance and low power consumption make it perfect for digital circuits, while its fast switching time makes it ideal for high-frequency communication networks. Furthermore, its high-voltage capability and wide voltage range allow it to be used in a variety of circuits requiring higher voltage.

The KSD471ACGTA is an ideal choice for a wide range of applications, from high-current amplifiers, switches, oscillators, and converters, to receivers and transmitters, and more. Its fast turn-on and turn-off times, low capacitance, and low power consumption make it the perfect choice for applications requiring a high-speed device with the necessary switching capabilities. Its wide voltage range allows for its use in applications requiring high voltage power supplies, making it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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