Allicdata Part #: | KSD401YTU-ND |
Manufacturer Part#: |
KSD401YTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 150V 2A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 2A 5MHz 25W Thro... |
DataSheet: | KSD401YTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 400mA, 10V |
Power - Max: | 25W |
Frequency - Transition: | 5MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSD401 |
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The KSD401YTU is a single bipolar junction transistor (BJT). It is a three-terminal device, where one side is the emitter, one side is the base, and the other side is the collector. The device is very versatile, and is used in a variety of applications and circuits. This article will discuss the application field and working principle of the KSD401YTU device.The KSD401YTU is a commonly used device in a variety of applications. It is often used in audio amplifiers, radio frequency amplifiers, video amplifiers, and pulse circuit applications. In addition, the device is capable of operating at frequencies ranging from 10MHz to 1000MHz. This makes it well suited for use in communications and medical imaging systems. Additionally, the device is able to operate with high voltage, current, and power handling up to 250V, 1A, and 250W, respectively. These characteristics make the KSD401YTU an ideal device for a wide range of applications in automotive, industrial, and consumer electronics.The working principle of the KSD401YTU device is based on the same basic design principles of all transistors. The device works by taking a small current through the base terminal, which results in a much larger current flowing through the collector terminal to the emitter terminal. This process is referred to as amplification, or the transistor effect. In the KSD401YTU device, an electrical signal is applied to the base terminal and is amplified by the current gain, or hFE. This gain is determined by the ratio of the collector current to the base current, and can range from 60 to 90. The amplified signal is then output pass through the collector terminal of the device. This process is known as active power gain, or gain-bandwidth product. The KSD401YTU is also designed to be highly stable, with a stable gain-bandwidth product up to 500MHz. Additionally, it has low noise characteristics, making it well suited for use in low noise applications. This stability is achieved through a process known as active-pull down, where the current of the device is held at a constant level, regardless of the driving voltage. In summary, the KSD401YTU is a single bipolar junction transistor that is highly versatile, and is used in a variety of application areas. The device works by amplifying an electrical signal applied to the base terminal, which is then output pass through the collector terminal. The device also features high stability and low noise characteristics, making it ideal for a variety of low noise applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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KSD401FYTU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 150V 2A TO-220B... |
KSD401YTU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 150V 2A TO-220B... |
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