KSD471ACGBU Allicdata Electronics
Allicdata Part #:

KSD471ACGBU-ND

Manufacturer Part#:

KSD471ACGBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW T...
DataSheet: KSD471ACGBU datasheetKSD471ACGBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 800mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSD471
Description

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KSD471ACGBU is a single bipolar junction transistor (BJT), and it is widely used in a variety of application fields. The device is capable of controlling relatively high currents and can work at temperatures of up to 125 degrees Celsius. The device is rated at 400V, with a minimum junction temperature of 6mA and a collector current of 100mA. It also features an open collector with an emitter-to-base resistance of 1.3k ohms.

KSD471ACGBU is an NPN type BJT and is widely used in many industrial and consumer applications. It is mainly used in applications like audio amplifiers, motor control, power supplies, battery managements systems, and switching circuits. The transistor can be used as an audio amplifier as it can be set to produce high quality audio signals.

The working principle of a KSD471ACGBU is based on the fact that when two semiconductor materials are brought together, a junction is created. This junction is called the PN junction, and it allows for current to pass from the Positive side (the P-side or P-material) to the Negative side (the N-side or N-material). This is due to the presence of a depletion region which allows an electric field to be created which is responsible for controlling the current that can flow through the junction.

It is important to note that the PN junction is prone to breakdown and the maximum voltage that can be applied to the junction is determined by the PN material used. The maximum voltage defined for KSD471ACGBU is 400V. When the device is turned on, the current entering the base increases, thus allowing more current to go through the collector-emitter path. Increasing the base current sharply reduces theVCEoff value of the device.

KSD471ACGBU also features a wide operating temperature range of 45 to 125 degrees Celsius and has a very low reverse leakage current. This makes it a perfect solution for many industrial applications, including using the transistor in transformer configurations for DC-DC converters. It can also be used to control loads in DC or AC circuits, or as a switch in home automation projects.

In conclusion, the KSD471ACGBU is one of the most commonly used single bipolar junction transistors. It is rated for up to 400V, with a minimum junction temperature of 6mA and a collector current of 100mA. It is used in many industrial and consumer applications, including audio amplifiers, motor control, power supplies, battery management systems, and switching circuits. The device has a wide operating temperature range and low reverse leakage current, making it ideal for many applicaitons.

The specific data is subject to PDF, and the above content is for reference

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