KSH3055ITU Allicdata Electronics
Allicdata Part #:

KSH3055ITU-ND

Manufacturer Part#:

KSH3055ITU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 10A I-PAK
More Detail: Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.75W Th...
DataSheet: KSH3055ITU datasheetKSH3055ITU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 2MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Base Part Number: KSH3055
Description

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The KSH3055ITU bipolar junction transistor (BJT) is a high-current, high-value transistor that can be used in many different applications. It is a single-piece device, which makes it easy to assemble and use. The KSH3055ITU is a popular choice for applications requiring higher currents and higher voltages than the standard single BJT. It can be used in DC and AC circuits, as well as analog and digital circuits.

The KSH3055ITU transistor is composed of several components. The first component is the collector-base junction, which allows a current to flow from the collector to the base. The second component is the emitter, which is responsible for creating the electrical field across the collector-base junction. The third component is the base-emitter junction, which is responsible for controlling the voltage applied to the collector.

The operation of the KSH3055ITU transistor is based on the principles of PNP or NPN BJT transistors. When a positive voltage (Vbe) is applied to the collector-base junction, it causes a current to flow from the collector to the base. This action is called “forward biasing”. On the other hand, when a negative voltage is applied to the base-emitter junction, it causes a current to flow from the emitter to the collector. This action is called “reverse biasing”. The amount of current that flows through the device is determined by the size of the applied voltage.

The KSH3055ITU transistor can be used in a variety of applications. One example is in power circuits, where the transistor can act as a switch for high-power appliances. The KSH3055ITU can also be used in radio circuits, where it can provide signal amplification. Additionally, the KSH3055ITU can be used in temperature control circuits, where it can be used to sense and control environmental temperature.

The KSH3055ITU is a reliable device that offers excellent performance in a range of applications. It is highly resistant to damage due to overheating and its high voltage rating ensures it can operate at high currents without damage. The KSH3055ITU is also capable of providing high levels of isolation, which is important in some types of applications.

In conclusion, the KSH3055ITU is a high-current, high-voltage single-piece transistor that can be used in a wide range of applications. Its reliable performance and high level of isolation makes it an ideal choice for many types of applications. Its versatility, reliability and durability make it an excellent choice for any application where high currents and voltages are required.

The specific data is subject to PDF, and the above content is for reference

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