KSH350TM

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KSH350TM application field and working principle

The KSH350TM is a 900V/350A NPN high power bipolar transistor produced by KEC. The transistor is mainly used in applications such as DC-DC converters and high power amplifier where extreme power is required. This transistor is designed to work under the following conditions: it can handle a collector to emitter voltage of up to 900V and current up to 350A. The KSH350TM is available in a TO-3P package with a base and collector tab for easy mounting.

The KSH350TM is a bipolar junction transistor, also known as a BJT. A BJT is a type of single-junction transistor, which is made of three semiconductor layers, an emitter, base and collector. The base layer of the BJT is the control element, which allows for current flow between the emitter and collector. The current flow is controlled by controlling the voltage applied to the base. The current flow can also be controlled by varying the current flowing into the base layer.

When a forward-biased voltage is applied to the base-emitter junction of the BJT, electrons are injected into the base layer. These electrons are then attracted to the collector layer and they cause a current to flow through the collector. This is known as the forward active mode. When a reverse-biased voltage is applied to the base-emitter junction, a reverse saturation current is generated which acts as a parasitic current. This is known as the reverse active mode.

The KSH350TM is capable of handling high current and power due to its high capability of dissipating heat. This high current capability is made possible due to the high voltage rating of the device. The KSH350TM is also suitable for applications such as AC-DC converters and switching mode power supplies, due to its fast recovery time. The device also features a high frequency response and low distortion, making it suitable for high frequency switching applications.

The KSH350TM is available in two different packages, a TO-3P package and a TO-3P2 package. It is important to choose the appropriate package for the application to ensure optimum thermal performance. The TO-3P package has the advantage of providing a more compact footprint and a higher packing density. The TO-3P2 package is a larger size, but has the advantage of providing a better thermal performance.

In conclusion, the KSH350TM is an excellent choice for applications that require high power and high current. It is available in two different packages and has an impressive performance rating. It is capable of handling up to 900V/350A and is suitable for applications such as DC-DC converters and high power amplifier. The device has a fast recovery time and high frequency response, making it suitable for high frequency switching applications.

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