KSH31CTF Discrete Semiconductor Products |
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Allicdata Part #: | KSH31CTFTR-ND |
Manufacturer Part#: |
KSH31CTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Su... |
DataSheet: | KSH31CTF Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Base Part Number: | KSH31 |
Description
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KSH31CTF is an integrated circuit (IC) technology used in many modern electronic components, including microprocessor chips, digital media devices and analog converters. It utilizes a combination of field-effect and bipolar transistors (BJT) to achieve high speed and power efficiency in applications that need high performance.KSH31CTF is an abbreviation for "KuoShiHall-31 Complementary Transistor Field Effect", indicating the structure of the IC, which utilizes a combination of complementary bipolar and field effect transistors (BJT/FET). The technology is based on a three-dimensional (3D) structure, where the integrated circuit has two layers of complementary bipolar transistors (BJT) and one layer of field-effect transistors (FET) between the two. In a KSH31CTF IC, the two layers of the BJT are arranged so that the N-type and P-type elements interact with each other to improve speed and power efficiency. The single layer of FET, which is sandwiched between the two BJT layers, is used as an intermediate stage to further improve the speed and power efficiency.The single layer of FET provides a parallel pathway for signals to propagate between the two BJT layers and provides an electrical path for inverting signals. This reduces power consumption and improves speed, while providing better thermal dissipation, thus allowing the IC to run cooler and faster.The KSH31CTF IC also provides a higher level of noise immunity than traditional BJT-based designs by reducing the effect of stray electrical fields. This results in improved signals and a shorter startup time. The main advantage of KSH31CTF technology is its ability to provide higher performance and efficiency than traditional BJT-based designs, while consuming less power. This technology has been used in the design of many modern electronic components, such as microprocessors, digital media devices, and analog converters.KSH31CTF technology is an example of a single-device technology, meaning it uses a single field-effect transistor to perform all the functions. This allows for a single device to be used instead of multiple devices, reducing the size, cost, and complexity of the overall system.KSH31CTF technology is a great example of the advancement of transistor technology, and its ability to deliver high performance and power efficiency in a single-device design. This technology continues to be used in many modern electronics products, and is likely to improve in the future with advances in semiconductor technology.
The specific data is subject to PDF, and the above content is for reference
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