KSH31CTM Allicdata Electronics
Allicdata Part #:

KSH31CTM-ND

Manufacturer Part#:

KSH31CTM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 3A DPAK
More Detail: Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Su...
DataSheet: KSH31CTM datasheetKSH31CTM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Base Part Number: KSH31
Description

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KSH31CTM is a single bipolar junction transistor (BJT) commonly used in consumer electronics products. It is one of the most popular transistors due to its low cost, reliability and small size. The KSH31CTM is used for switching and amplifying signals, and is also used in computer graphics applications. This article provides an overview of the KSH31CTM transistor and its working principle.

KSH31CTM Applications

KSH31CTM transistors are used for a variety of application areas, such as amplifying and switching signals in consumer electronics and computers. In consumer electronics, KSH31CTM transistors are used in audio amplifiers, televisions and audio-video receivers. In computer graphics, KSH31CTM transistors are used in graphics cards to improve graphics performance by increasing the number of pixels that can be rendered in a given time frame. KSH31CTM transistors can also be used in digital circuits, such as logic gates, flip-flops, multiplexers and demultiplexers.

KSH31CTM Operation Principle

The KSH31CTM transistor is a bipolar junction transistor, and operates according to the principle of operation of all bipolar junction transistors. Bipolar junction transistors consist of three connections, or layers, namely the base, collector, and emitter. The base and collector layers are P-type, and the emitter is N-type. The base layer is connected to an external circuit and current flows through this layer. The collector layer is connected to the ground and current is conducted from the base to the collector via the emitter.

The current flow is controlled by the current that passes through the base layer. When a current is passed through the base layer, it also passes through the emitter and the collector layers, and an electric field is established between the collector and the emitter layers. This electric field influences the current flow. If the current passing through the base is increased, the electric field increases, and the current passing through the emitter and the collector layers is increased as well, resulting in an increase in total current.

KSH31CTM Characteristics

KSH31CTM transistors have a maximum collector current of 1.5A, a maximum collector-emitter voltage of 30V, a maximum transistor power dissipation of 500 mW, and a maximum switching frequency of 250 kHz. It has a forward current gain (hfe) of 70-150 at a base current of 1-2 mA, and a transition frequency of 300-400 MHz. The KSH31CTM transistor also has high temperature stability with a maximum operating temperature of 175°C.

Conclusion

In conclusion, the KSH31CTM is a widely used single bipolar junction transistor. It is used for switching and amplifying signals in consumer electronics, computers, and digital electronics. Its characteristics include high temperature stability, a high transition frequency, and low power dissipation. The KSH31CTM transistor operates according to the operating principle of all bipolar junction transistors, where current flow is controlled by the current passing through the base layer.

The specific data is subject to PDF, and the above content is for reference

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