Allicdata Part #: | 497-8323-2-ND |
Manufacturer Part#: |
L6393DTR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC GATE DRIVER HALF BRDGE 14SO |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 14-SO |
DataSheet: | L6393DTR Datasheet/PDF |
Quantity: | 1000 |
Current - Peak Output (Source, Sink): | 290mA, 430mA |
Base Part Number: | L6393 |
Supplier Device Package: | 14-SO |
Package / Case: | 14-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 75ns, 35ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 1.1V, 1.9V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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L6393DTR is a high-performance gate driver integrated circuit (IC) by STMicroelectronics. It is most suitable for driving power MOSFETs and other power switches in applications including DC/DC converters, motors, and solenoid/valves control, among others. The circuit utilizes a wide range of operating voltages from 2.5 V to 28 V to drive with up to 18 A peak current, up to 5.5A continuous current, with peak load of 12 A. The high level of integration and the low-level standby current feature of the circuit contribute to its category as one of the most efficient gate drivers in the market.
The L6393DTR uses a full bridge (H-bridge) configuration with four power MOSFETs, two fast diodes, two RC detectors, two PWN/Vcc reset outputs, level controllers and two gates. This layout makes it suitable for driving bipolar power MOSFETs, N-channel MOSFETs, ohmic resistors, and other switching devices used in several power switches applications. The circuit also offers an external bootstrap capability, allowing the driver to exceed the Vcc and ground lines of the power supply.
In terms of operation, the circuit requires a dual pulse width modulation (PWM) input to drive the MOSFETs. The duty cycle of the pulses dictates the charge, discharge, and on-off times of the MOSFETs. The external bootstrap capacitor provides a voltage level higher than Vcc in order to control the gate of the upper and lower MOSFETs independently. The IC can also provide a logic compatible fault signal, in order to bypass any errors or disruption during operation. Additionally, the circuit utilizes thermal protection, thus preventing any over-current or over-temperature from damaging the gate driver.
The L6393DTR gate driver is considered very reliable in the segment, thanks to STMicroelectronics’ ingenious design and efficient implementation. This helps reduce the complexity of the design process and allows engineers a simpler, more reliable implementation. In terms of performance, the circuit offers various benefits such as a wide range of operating voltages, improved power efficiency, and decreased switching losses, which contribute to its popularity in various motor control, DC/DC converters, and solenoid/valve control applications.
The L6393DTR gate driver is a prime example of how PMIC - Gate Drivers can provide more efficient and reliable designs. In addition, the feature-rich integrated design of the circuit makes it a perfect fit for various switching applications. Thanks to its wide range of operating voltages, improved power efficiency and decreased switching losses, the L6393DTR provides an attractive, reliable, and cost-effective solution for various applications.
The specific data is subject to PDF, and the above content is for reference
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