LE25S20FD-AH Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	2Mb (256K x 8)
Clock Frequency:	40MHz
Write Cycle Time - Word, Page:	3.5ms
Memory Interface:	SPI
Voltage - Supply:	1.65 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-VSOIC

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MemoryLE25S20FD-AH is an advanced memory product that combines today’s state-of-the-art memory technologies, including Flash Memory and NAND Flash. This product is highly reliable, making it an ideal solution for a variety of applications, such as automobiles, consumer electronics, industrial applications, and more. In this article, we’ll explore the LE25S20FD-AH’s application field and working principle.The LE25S20FD-AH is designed to deliver improved performance and data transfer rates vs. conventional NAND Flash-based chips, and also incorporates a variety of error-correction features, allowing for optimal data storage. This type of memory is often used in automotive and gesture sensor applications, as well as in industrial applications and consumer electronics.In automotive applications, the LE25S20FD-AH enables high-speed data access for the car’s navigation system, and can also be used to store a variety of sensor readings. Riding on its advanced error-correction capabilities, the device is also capable of being used as an automotive event recorder, providing accurate data to be used in post-accident investigations and analyses.In gesture sensor applications, LE25S20FD-AH helps to store and handle gesture data from a variety of sensors. This type of memory not only reduces the latency of the system but also enhances its ability to respond to user input. In industrial applications, the memory is used for high-speed data storage, data logging, and analysis. It also offers improved data protection, allowing for reliability and stability in industrial system operations.In terms of its working principle, LE25S20FD-AH memory consists of a plurality of NAND Flash memory cells and uses the NAND Flash memory architecture. The memory cells have a floating-gate transistor structure and are connected to a data line and a bit line. As each of the memory cells is charged and discharged, the bit and data lines form an electrical connection / disconnection. The data stored in the cells is processed as either a voltage "high" or "low". When a logical "high" is stored, the memory cell is discharged and a logical "low" indicates that the cell is charged.In addition, for the safe storage of data, the LE25S20FD-AH\'s NAND cells can be divided into 4 segments, each with 512 bytes of storage capacity. Furthermore, this type of memory also has an integrated error-correction controller, which helps to reduce the occurrence of memory errors and data loss. Since LE25S20FD-AH has built-in error correction, it provides improved data security, allowing for smooth operation in a variety of applications.In conclusion, the LE25S20FD-AH is a reliable and efficient memory product, combining the latest Flash Memory and NAND Flash technologies. It is well-suited for applications such as automotive, gesture sensors, and industrial operations, offering fast data access and enhanced data protection. The LE25S20FD-AH’s working principle consists of NAND Flash memory cells, each with 512 bytes of storage capacity. Moreover, the included error-correction controller helps to reduce memory errors and data loss, making the product highly reliable.

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