Allicdata Part #: | LE25S20XATAG-ND |
Manufacturer Part#: |
LE25S20XATAG |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC FLASH 2M SPI 40MHZ 8WLCSP |
More Detail: | FLASH Memory IC 2Mb (256K x 8) SPI 40MHz |
DataSheet: | LE25S20XATAG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (256K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 3.5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.65 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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The LE25S20XATAG is an industry-leading combination of an EEPROM Read Only Memory (ROM) device and a static random-access memory (SRAM) device. This combination provides a powerful and efficient memory solution for a variety of memory and storage applications.
The LE25S20XATAG is a semiconductor memory device that comprises both an EEPROM and an SRAM component. The EEPROM component is used for storing code, data, and other information. The SRAM component is utilized for storing data that changes more frequently. The LE25S20XATAG is designed to have a high level of reliability, as well as high write and read speeds. The device also has a low power consumption, making it suitable for most battery operated applications.
The LE25S20XATAG is often used in a variety of applications, including automotive, embedded systems, medical, military and industrial applications. The most common application of the LE25S20XATAG is found in automotive and embedded applications. In these applications, the EEPROM is used to store program code and other static data, while the SRAM is used to store dynamic data that changes frequently. The LE25S20XATAG is also used in applications that require high levels of reliability and speed, such as in military and medical devices.
The LE25S20XATAG works by combining an EEPROM and an SRAM component. EEPROM stands for Electrically Erasable Programmable Read-Only Memory. The EEPROM component is used for storing program code and other static data, while the SRAM component is used for storing dynamic data that changes more frequently. The LE25S20XATAG also has a very low power consumption compared to other memory devices. This makes it suitable for battery operated applications.
In order to use the LE25S20XATAG, the user must first program the device. This is done with dedicated software programs, such as Xilinx iMPACT. The device can be programmed with various types of data, including program code and other static data. Once programmed, the device will be able to store and access the data it contains. This can be done using either a serial or parallel interface, depending on the application.
The LE25S20XATAG is an excellent memory solution for a variety of applications. Its combination of an EEPROM and an SRAM component provide high write and read speeds, as well as low power consumption. This makes it ideal for most battery operated applications. Additionally, its high level of reliability makes it suitable for use in automotive, embedded systems, medical, military and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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