LE25U40CMDTWG Allicdata Electronics

LE25U40CMDTWG Integrated Circuits (ICs)

Allicdata Part #:

LE25U40CMDTWGOSTR-ND

Manufacturer Part#:

LE25U40CMDTWG

Price: $ 0.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC FLASH 4M SPI 40MHZ 8SOIC
More Detail: FLASH Memory IC 4Mb (512K x 8) SPI 40MHz 8-SOIC
DataSheet: LE25U40CMDTWG datasheetLE25U40CMDTWG Datasheet/PDF
Quantity: 1000
2000 +: $ 0.22872
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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LE25U40CMDTWG is a dedicated high-performance Serial Memory Chip with an unusually large capacity of up to 4GB. It is specifically designed for applications with distributed data storage such as Body Control Modules (BCM), automated gauge clusters (AGC), instrument panels (IP), CAN gateways, Lock and Secure systems, mobile phones, etc. The LE25U40CMDTWG has the advantage of high-speed dual-channel communication, allowing multiple devices to transfer data in parallel. This product is made up of a high-density memory array, which supports up to 4GB of data, and a DRAM circuit, which provides up to 1GB of data storage per access time.

The LE25U40CMDTWG is a non-volatile memory chip and is made up of two different types of memory, the Flash and the SRAM. The SRAM is an ultra-fast memory type which provides fast access to stored data. The Flash memory is a non-volatile type and is used for data storage for longer periods of time. The two types of memory are used in combination to allow for a much faster read and write times than if only one type of memory was used.

The LE25U40CMDTWG is used for various applications such as data storage for Body Control Modules, instrument panels, automated gauge clusters, CAN gateways, Lock and Secure systems, etc. It is used in these applications by incorporating the Flash memory and SRAM memory together to provide high-speed access times. The Flash memory stores the data while the SRAM is used to read and write the data faster. The LE25U40CMDTWG also provides a power protection function which prevents data loss due to an accidental power failure.

The working principle of the LE25U40CMDTWG is simple. Data is put into the memory array and stored until it is needed. When the data is needed, it is transferred from the memory array to the DRAM circuit in a matter of milliseconds. The DRAM circuit then uses up its 1GB of data storage until it is full and the data is then transferred back to the memory array. This process allows for fast access times and large data storage capacities.

The LE25U40CMDTWG is a great product for a variety of applications where distributed data storage is needed. It’s fast dual-channel communication and power protection function make it ideal for data storage in industries such as automotive, security and mobile devices. By combining theFlash and SRAM memory together, the LE25U40CMDTWG ensures that data is easily transferred in between devices with minimal latency.

The specific data is subject to PDF, and the above content is for reference

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