Allicdata Part #: | LE25S80FDTWG-ND |
Manufacturer Part#: |
LE25S80FDTWG |
Price: | $ 0.55 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC FLASH 8M SPI 40MHZ 8VSOIC |
More Detail: | FLASH Memory IC 8Mb (1M x 8) SPI 40MHz 8-VSOIC |
DataSheet: | LE25S80FDTWG Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.49856 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 8Mb (1M x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 1.65 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 90°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-VSOIC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a fundamental part of modern computing and includes many different types of components. One such type is a LE25S80FDTWG, a specialized device that can store data and recall it on demand. This type of memory is popular in a variety of applications, from industrial to consumer electronics. In this article, we’ll take a look at the application field and working principle of LE25S80FDTWG memory.LE25S80FDTWG memory is a nonvolatile memory device, which means it can store data for long periods of time without needing a power source. Its main attribute is its ability to retain data even when power supply is lost, making it an ideal choice for applications that require data to be available at any time. This makes LE25S80FDTWG memory useful in applications that require reliable data retention, such as industrial and medical instrumentation, data logging applications, automotive applications, and even consumer electronics.LE25S80FDTWG memory works by taking advantage of its nonvolatile nature. To write data to the device, an external control signal is typically used to trigger the write operation. This signal is then applied to the memory cell, which is composed of an individual transistor. When the external signal is applied, the transistor is turned “on” and a small electrical charge is written to the memory cell.To read data from the device, an external control signal is typically used to trigger the read operation. Then, the voltage level of the memory cell is monitored to determine the data stored within the cell. If the voltage level is low, the logic state of the cell is a “zero”. Conversely, if the voltage level is high, the logic state of the cell is a “one”.In addition to its nonvolatile nature, LE25S80FDTWG memory can also support fast write and read operations. This is because of its low access time, which is approximately 15ns. This means that the device can write or read data within 15ns of the external control signal being applied.The advantages of LE25S80FDTWG memory also include its small size, low power consumption, and high reliability. In addition, the device can also provide a wide temperature range of operation, making it suitable for both industrial and consumer applications.In summary, LE25S80FDTWG memory is a nonvolatile, fast, and reliable device that can be used in a variety of applications. Its small size, low power consumption, and high reliability make it an ideal choice for a variety of applications, from industrial to consumer electronics. Moreover, its wide temperature range of operation ensures that the device can be used in a variety of environment and applications, making it a versatile memory solution.
The specific data is subject to PDF, and the above content is for reference
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